Light emitting nitride semiconductor device and method of fabricating the same
AssigneeSharp Kabushiki Kaisha
InventorMayuko Fudeta
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Abstract
There is provided a light emitting nitride semiconductor device including a substrate, a semiconductor layer of a first conductivity overlying the substrate, a light emitting layer overlying the semiconductor layer of the first conductivity, a semiconductor layer of a second conductivity overlying the light emitting layer, and a second electrode overlying at least the semiconductor layer of the second conductivity, wherein the second electrode has a high reflectance for a main light emission wavelength and the light emitting device allows light to be extracted mainly at a side surface thereof.
Claims18
A light emitting nitride semiconductor device, comprising:
- a substrate,
- a semiconductor layer of a first conductivity type overlying said substrate,
- a light emitting layer overlying said semiconductor layer of said first conductivity type,
- a semiconductor layer of a second conductivity type overlying said light emitting layer, and
- a first electrode overlying said semiconductor layer of said second conductivity type,
- wherein said first electrode is configured to reflect light having a main light emission wavelength and to reflect a portion of light emitted from said light emitting layer, and the light emitting device is configured to release light from at least one side surface of the light emitting device.
Dependencies are inferred from the claim text.