Phosphorescent nanotube memory device

#The present invention relates to a memory cell, specifically a photon-based memory cell.

#Integrated circuit designers have always sought the ideal semiconductor memory: a device that is randomly accessible; can be written to or read from very quickly; is non-volatile, but indefinitely alterable; and consumes little power.

#One common volatile memory is the DRAM in which information can be written to and read from as bits of data, e.g., a “1” or a “0,” where a “1” generally corresponds to one voltage state stored on a capacitor, and a “0” generally corresponds to another voltage state stored in the capacitor. The capacitor of the DRAM cell typically has an associated transistor that acts as a switch to allow the control circuitry on the memory chip to read from and write to the capacitor.

#The above-described features and advantages of the invention will be more clearly understood from the following detailed description, which is provided with reference to the accompanying drawings in which:

#FIG. 1 illustrates a cross-sectional view of a memory cell constructed in accordance with an exemplary embodiment of the invention;

#FIG. 2 illustrates a partial cross-sectional view of a memory cell constructed in accordance with a second exemplary embodiment of the invention;

#In the following detailed description, reference is made to specific exemplary embodiments of the invention. It is to be understood that other embodiments may be employed, and that structural and electrical changes may be made without departing from the spirit or scope of the present invention.

#The term “semiconductor substrate” is to be understood to include any semiconductor-based structure that has an exposed semiconductor surface. The semiconductor structure should be understood to include silicon, silicon-on-insulator (SOI), silicon-on-sapphire (SOS), doped and undoped semiconductors, epitaxial layers of silicon supported by a base semiconductor foundation, and other semiconductor structures. The semiconductor substrate need not be silicon-based. The semiconductor could be silicon-germanium, germanium, or gallium arsenide. When reference is made to a semiconductor substrate in the following description, previous process steps may have been utilized to form regions or junctions in or over the base semiconductor or foundation. Also, the invention may be formed over non-semiconductor substrates.

#The fabrication steps below are discussed as being performed in an exemplary order, however this order may be altered and still maintain the spirit and scope of the invention.