US 7,352,005 B2 · Electro-optical device, manufacturing method thereof, and electronic apparatus

Abstract

The disclosure is directed to an electro-optical device and manufacturing method. In one example, a storage capacitor is disposed above a data line. The storage capacitor has a stacked structure of a fixed-potential electrode, a dielectric layer, and a pixel-potential electrode. The storage capacitor is disposed in an area including a region opposed to a channel region of a pixel-switching thin film transistor. A peripheral circuit is disposed in a peripheral area located around a pixel array area. The peripheral circuit includes a peripheral-circuit thin film transistor. The dielectric layer includes a peripheral dielectric layer area having a region opposed to the channel region of the peripheral-circuit thin film transistor.

Drawings

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Drawings

Claims12

Dependent claims

An electro-optical device including a pixel array area in which are arranged a plurality of pixels, the electro-optical device comprising:

a data line and a scanning line extending to intersect each other on a substrate;
a pixel-switching thin film transistor disposed in the pixel that corresponds to an intersection of the data line and the scanning line, the pixel-switching thin film transistor being disposed below the data line on the substrate;
a storage capacitor, in plan view, being disposed above the data line and having a stacked structure of a fixed-potential electrode, a dielectric layer, and a pixel-potential electrode, the fixed-potential electrode and the pixel-potential electrode being separate layers that sandwich the dielectric layer, and the storage capacitor being disposed in an area including a region opposed to a channel region of the pixel-switching thin film transistor;
a pixel electrode electrically connected to the pixel-potential electrode and the pixel-switching thin film transistor, the pixel electrode being disposed above the storage capacitor;
a peripheral circuit for driving the pixel electrode through the data line and the scanning line, the peripheral circuit being disposed in a peripheral area located around the pixel array area, the peripheral circuit including a peripheral-circuit thin film transistor having a channel region;
and
the dielectric layer including a peripheral dielectric layer area having, in plan view, a region opposed to the channel region of the peripheral-circuit thin film transistor.

4 more elements

An electro-optical device comprising:

data lines and scanning lines extending to intersect each other on a substrate;
a pixel-switching thin film transistor disposed in pixels that correspond to an intersection of the data lines and the scanning lines, the pixel-switching thin film transistor being disposed below the data lines on the substrate;
a storage capacitor having a stacked structure of a fixed-potential electrode, a dielectric layer, and a pixel-potential electrode, and the storage capacitor, in plan view, being disposed in an area including a region opposed to a channel region of the pixel-switching thin film transistor and being disposed above the data lines;
a pixel electrode electrically connected to the pixel-potential electrode and the pixel-switching thin film transistor, the pixel electrode being disposed above the storage capacitor for each pixel;
a peripheral circuit for driving the pixel electrode through the data lines and the scanning lines, the peripheral circuit being disposed in a peripheral area located around a pixel array area in which the pixels are arranged and including a peripheral-circuit thin film transistor having a channel region that is disposed below the storage capacitor;
and
wherein, in plan view, the dielectric layer includes
a non-opened area located between opened areas of the pixels and
a peripheral dielectric layer area having slits and a region opposed to the channel region of the peripheral-circuit thin film transistor.

6 more elements

Dependencies are inferred from the claim text.

Description9,830 words

Summary2,160 words

#1. Technical Field

#This disclosure relates to an electro-optical device such as a liquid crystal device, a manufacturing method thereof, and an electronic apparatus such as a liquid crystal projector.

#2. Related Art

Brief description of the drawings19 figures

#Various embodiments will be described with reference to the accompanying drawings, wherein like numbers reference like elements.

#FIG. 1 is a plan view illustrating an entire configuration of a liquid crystal device according to a first embodiment.

#FIG. 2 is a cross-sectional view taken along Line H-H′.

Detailed description7,182 words

#Hereinafter, exemplary embodiments will be described with reference to the drawings. In the embodiments described below, a TFT active matrix liquid crystal device having a built-in driving circuit is described as an example of an electro-optical device according to certain embodiments.

#A liquid crystal device according to a first embodiment will be described with reference to FIGS. 1 to 10.

#First, the entire configuration of the liquid crystal device according to the first embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view illustrating the entire configuration of the liquid crystal device according to the first embodiment and FIG. 2 is a cross-sectional view taken along Line H-H′.

Facts

Application

11/384,968Filed 20 Mar 2006

Priority

JP 2005-11314711 Apr 2005

Published

US 2006/0226423 A112 Oct 2006

Granted

1 Apr 2008

Term ended

12 May 2026

Estimated · how

20 years from earliest known nonprovisional domestic filing plus recorded patent term adjustment, including 53 days of adjustment. Maintenance-fee lapses, terminal disclaimers and statutory extensions have not been checked. The continuity chain may be incomplete; this is not an enforceability determination.

Classification10 codes

G02F 1/13454
Conductors connecting electrodes to cell terminals: drivers integrated on the active matrix substrate
G02F 1/136213
Active matrix addressed cells: storage capacitors associated with the pixel electrode
H10D 86/451
Characterised by multiple TFTs: characterised by the compositions or shapes of the interlayer dielectrics
H10D 86/481
Characterised by multiple TFTs: integrated with passive devices, e.g. auxiliary capacitors

Timeline

11 Apr 2005Priority claimedJP 2005-113147
20 Mar 2006Application filedUS 11/384,968
20 Mar 2006Assigned to Seiko Epson Corporationassignment of assignor's interest
20 Mar 2006Assigned to Seiko Epson Corporationassignment of assignor's interest
12 Oct 2006PublishedUS 2006/0226423 A1
1 Apr 2008GrantedUS 7,352,005 B2
12 May 2026Term endedEstimated, includes 53 days of adjustment

Electro-optical device, manufacturing method thereof, and electronic apparatus

Life of this patent

Electro-optical device, manufacturing method thereof, and electronic apparatus

Life of this patent

Life of this patent

Abstract

Drawings

Drawings

Claims12

Description9,830 words

Drawings

Classification10 codes

Life of this patent

Description9,830 words