Semiconductor device including semiconductor thin films having different crystallinity, substrate of the same, and manufacturing method of the same, and liquid crystal display and manufacturing method of the same

A thin-film semiconductor device comprising:

• a base layer;
• and
• a plurality of first and second transistors formed on the base layer,
• wherein the first and second transistors include semiconductor thin films having different crystallinity, the semiconductor thin films having a same thickness, and at least one of the first transistors and at least one of the second transistors are formed in each of a plurality of unit regions.

A thin-film semiconductor device comprising:

• a transparent base layer;
• a plurality of first semiconductor devices arranged in a matrix form on the base layer and including first semiconductor thin films;
• and
• a plurality of second semiconductor devices arranged in the vicinity of the respective first semiconductor devices and including second semiconductor thin films,
• wherein the first semiconductor thin films are different from the second semiconductor thin films in crystallinity and have a same thickness, and at least one of the first semiconductor devices and at least one of the second semiconductor devices are formed in each of a plurality of unit regions and are located adjacent to each other.

A liquid crystal display comprising:

• first and second base layers including surfaces which are disposed apart from each other and are located opposite to each other;
• a liquid crystal disposed between the surfaces disposed opposite to each other;
• a plurality of first and second electrodes arranged on the surfaces disposed opposite to each other;
• and
• a pixel electrode and semiconductor thin films disposed on the opposite surface of one of the base layers, wherein these semiconductor thin films are disposed in a plurality of unit regions disposed adjacent to one another to form a first channel region of at least one first semiconductor device and a second channel region of at least one second semiconductor device, the first and second channel regions are electrically connected to each other, and the first channel region is different from the second channel region in crystallinity, wherein the first channel region has a same thickness as the second channel region.

A liquid crystal display comprising:

• first and second substrates having inner sides which are disposed apart from each other and are located opposite to each other;
• a liquid crystal layer disposed between the first and second substrates;
• a plurality of first and second electrodes arranged on the inner sides of the first and second substrates;
• a pixel electrode disposed on the inner side of the first substrate;
• a plurality of first and second thin film transistors disposed on the inner side of the first substrate,
• wherein at least one of the first thin film transistors and at least one of the second thin film transistors being disposed in each of a plurality of unit regions that are uniformly arranged in a matrix of rows and columns,
• wherein each of the first and second thin film transistors include a semiconductor layer provided on the inner side of the first thin film transistor, a gate insulated layer provided on the semiconductor layer and a gate electrode provided on the gate insulating layer to face the semiconductor layer, and
• wherein the semiconductor layers of the first thin film transistors are different from the semiconductor layers of the second thin film transistors in crystallinity.