Noble high-k device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLiang-Gi Yao, Tien-Chih Chang, Ming-Fang Wang, Shih-Chang Chen, Mong-Song Liang
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Abstract
At least one high-k device, and a method for forming the at least one high-k device, comprising the following. A structure having a strained substrate formed thereover. The strained substrate comprising at least an uppermost strained-Si epi layer. At least one dielectric gate oxide portion over the strained substrate. The at least one dielectric gate oxide portion having a dielectric constant of greater than about 4.0. A device over each of the at least one dielectric gate oxide portion to complete the least one high-k device. A method of forming the at least one high-k device.
Claims21
At least one high-k device, comprising:
- a structure having a strained substrate formed thereover, the strained substrate comprising an uppermost strained-Si epi layer, a middle relaxed Si1-xGex layer and a lowermost graded Si1-yGey layer, the uppermost strained-Si epi layer being disposed directly on the middle relaxed Si1-xGex layer;
- at least one dielectric gate oxide portion over the strained substrate, the at least one dielectric gate oxide portion having a dielectric constant of greater than about 4.0;
- and
- a device over each of the at least one dielectric gate oxide portion to complete the at least one high-k device.
At least one high-k device, comprising:
- a structure having a strained substrate formed thereover, the strained substrate comprising an uppermost strained-Si epi layer, a middle Si1-xGex layer and a lower silicon oxide layer;
- at least one dielectric gate oxide portion over the strained substrate, the at least one dielectric gate oxide portion having a dielectric constant of greater than about 4.0;
- and
- a device over each of the at least one dielectric gate oxide portion to complete the at least one high-k device.
At least one high-k device, comprising:
- a structure having a strained substrate formed thereover, the strained substrate comprising an uppermost strained-Si epi layer over an upper relaxed Si1-xGex layer over a graded Si1-yGey layer over an epi layer over a lowermost relaxed Si1-zGez layer, wherein x≧y≧z;
- at least one dielectric gate oxide portion over the strained substrate, the at least one dielectric gate oxide portion having a dielectric constant of greater than about 4.0;
- and
- a device over each of the at least one dielectric gate oxide portion to complete the at least one high-k device.
At least one high-k device, comprising:
- a structure having a strained substrate formed thereover, the strained substrate comprising an uppermost strained-Si epi layer, a relaxed Si1-yGey layer under the uppermost strained-Si epi layer, a constant Si1-yGey layer under the relaxed SiyGey layer, a silicon epi layer under the constant Si1-yGey layer, and a constant Si1-zGez layer under the silicon epi layer, wherein the uppermost relaxed-Si epi layer is comprised of Si1-xGex wherein x is constant or graded;
- at least one dielectric gate oxide portion over the strained substrate, the at least one dielectric gate oxide portion having a dielectric constant of greater than about 4.0;
- and
- a device over each of the at least one dielectric gate oxide portion to complete the at least one high-k device.
At least one high-k device, comprising:
- a structure having a strained substrate formed thereover, the strained substrate comprising at least an uppermost strained-Si epi layer having a dislocation density of strained-Si epi of less than about 1E6/cm2;
- at least one dielectric gate oxide portion over the strained substrate, the at least one dielectric gate oxide portion having a dielectric constant of greater than about 4.0;
- and
- a device over each of the at least one dielectric gate oxide portion to complete the at least one high-k device.
At least one high-k device, comprising:
- a structure having a strained substrate formed thereover, the strained substrate comprising only an uppermost strained-Si epi layer having a thickness of from about 100 to 500 Å;
- at least one dielectric gate oxide portion over the strained substrate, the at least one dielectric gate oxide portion having a dielectric constant of greater than about 4.0;
- and
- a device over each of the at least one dielectric gate oxide portion to complete the at least one high-k device.
Dependencies are inferred from the claim text.