Method of manufacturing crystalline film, method of manufacturing crystalline-film-layered substrate, method of manufacturing thermoelectric conversion element, and thermoelectric conversion element

A method of manufacturing a crystalline-film-layered substrate, comprising the steps of:

• epitaxially growing on a first substrate a crystalline film including a layered structure so that the layered structure comes into contact with the substrate;
• contacting water vapor supplied from a water vapor source with the layered structure in a chamber;
• and
• separating the layered structure that has been contacted with the water vapor from the first substrate while contacting the crystalline film with a second substrate, to transfer the crystalline film from the first substrate onto the second substrate;
• wherein the layered structure includes a layer containing an alkali metal, and a layer containing an oxide of at least one element selected the group consisting of Co, Fe, Ni, Mn, Ti, Cr, V, Nb, and Mo.

A method of manufacturing a crystalline-film-layered substrate, comprising the steps of:

• epitaxially growing on a first substrate a first crystalline film including a layered structure so that the layered structure comes into contact with the first substrate;
• epitaxially growing on a second substrate a second crystalline film including a layered structure so that the layered structure comes into contact with the second substrate;
• contacting water vapor supplied from a water vapor source with the layered structure of the first crystalline film and the layered structure of the second crystalline film in a chamber while the first crystalline film and the second crystalline film are in contact with a third substrate;
• and
• separating the first crystalline film and the second crystalline film from the first substrate and the second substrate, respectively, while keeping the first crystalline film and the second crystalline film in contact with the third substrate, to transfer the first crystalline film and the second crystalline film from the first substrate and the second substrate onto the third substrate;
• wherein the layered structure includes a layer containing an alkali metal, and a layer containing an oxide of at least one element selected the group consisting of Co, Fe, Ni, Mn, Ti, Cr, V, Nb, and Mo.

A method of manufacturing a thermoelectric conversion element comprising a crystalline film that serves as a p-type thermoelectric conversion layer or an n-type thermoelectric conversion layer, the method comprising the steps of;

• epitaxially growing on a substrate a crystalline film including a layered structure so that the layered structure comes into contact with the substrate;
• contacting water vapor supplied from a water vapor source with the layered structure in a chamber;
• and
• separating the layered structure that has been contacted with the water vapor from the substrate to obtain the crystalline film;
• wherein the layered structure includes a layer containing an alkali metal, and a layer containing an oxide of at least one element selected from the group consisting of Co, Fe, Ni, Mn, Ti, Cr, V, Nb, and Mo.

A method of manufacturing a thermoelectric conversion element comprising a crystalline-film-layered substrate on which a crystalline film serving as a p-type thermoelectric conversion layer or an n-type thermoelectric conversion layer is disposed, the method comprising the steps of:

• epitaxially growing on a first substrate a crystalline film including a layered structure so that the layered structure comes into contact with the substrate;
• contacting water vapor supplied from a water vapor source with the layered structure in a chamber;
• and
• separating the layered structure that has been contacted with the water vapor from the first substrate while contacting the thermoelectric conversion layer with a second substrate, to transfer the crystalline film from the first substrate onto the second substrate;
• wherein the layered structure includes a layer containing an alkali metal, and a layer containing an oxide of at least one element selected the group consisting of Co, Fe, Ni, Mn, Ti, Cr, V, Nb, and Mo.

A method of manufacturing a thermoelectric conversion element comprising a p-type crystalline-film-layered-substrate on which a crystalline film serving as a p-type thermoelectric conversion layer is disposed and n-type crystalline-film-layered-substrate on which a crystalline film serving as an n-type thermoelectric conversion layer is disposed, the method comprising the steps of:

• obtaining the p-type crystalline-film-layered-substrate and the n-type crystalline-film-layered-substrate, and
• stacking the p-type crystalline-film-layered-substrate and the n-type crystalline-film-layered-substrate,
• wherein each step of obtaining the p-type crystalline-film-layered-substrate and the n-type crystalline-film-layered-substrate comprises the following steps:
• epitaxially growing on a first substrate a crystalline film including a layered structure so that the layered structure comes into contact with the substrate;
• contacting water vapor supplied from a water vapor source with the layered structure in a chamber;
• and
• separating the layered structure that has been contacted with the water vapor from the first substrate while contacting the thermoelectric conversion layer with a second substrate, to transfer the crystalline film from the first substrate onto the second substrate;
• wherein the layered structure includes a layer containing an alkali metal, and a layer containing an oxide of at least one element selected from the group consisting of Co, Fe, Ni, Mn, Ti, Cr, V, Nb, and Mo.

A method of manufacturing a thermoelectric conversion element comprising a crystalline-film-layered substrate on which a first crystalline film serving as a p-type thermoelectric conversion layer and a second crystalline film serving as an n-type thermoelectric conversion layer are disposed, the method comprising the steps of:

• epitaxially growing on a first substrate a first crystalline film including a layered structure so that the layered structure comes into contact with the first substrate;
• epitaxially growing on a second substrate a second crystalline film including a layered structure so that the layered structure comes into contact with the second substrate;
• contacting water vapor supplied from a water vapor source with the layered structure of the first crystalline film and the layered structure of the second crystalline film in a chamber while the first crystalline film and the second crystalline film are in contact with a third substrate;
• and
• separating the first crystalline film and the second crystalline film from the first substrate and the second substrate, respectively, while keeping the first crystalline film and the second crystalline film in contact with the third substrate, to transfer the first crystalline film and the second crystalline film from the first substrate and the second substrate onto the third substrate;
• wherein the layered structure includes a layer containing an alkali metal, and a layer containing an oxide of at least one element selected from the group consisting of Co, Fe, Ni, Mn, Ti, Cr, V, Nb, and Mo.