Method for producing silicon nitride films and process for fabricating semiconductor devices using said method
AssigneeL'Air Liquide, Societe Anonyme a Directoire et Conseil de Surveillance pour l'Etude et l'Exploitation des Procedes Georges Claude
InventorsTakeshi Hoshi, Tsuyoshi Saito, Takako Kimura, Christian Dussarrat, Kazutaka Yanagita
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Abstract
Silicon nitride film is formed on a silicon wafer mounted in a boat in an LPCVD tool by feeding a silicon source (SiH2Cl2, SiCl4, Si2Cl6, etc.) from an injector and feeding a mixed gas of monomethylamine (CH3NH2) and ammonia (NH3) as the nitrogen source from an injector. This addition of monomethylamine to the source substances for film production makes it possible to provide an improved film quality and improved leakage characteristics even at low temperatures (450-600° C.).
Claims12
A method which may be used for forming a silicon nitride film with a gaseous silicon source, a gaseous nitrogen source, and a gaseous carbon-hydrogen source, wherein:
- a) said silicon source comprises at least silicon;
- b) said nitrogen source comprises at least nitrogen;
- and
- c) said carbon-hydrogen source comprises methylamine.
A method which may be used for forming a silicon nitride film in a semiconductor device, comprising forming a silicon nitride film with a gaseous silicon source, a gaseous nitrogen source, and a gaseous carbon-hydrogen source, wherein:
- a) said silicon source comprises at least silicon;
- b) said nitrogen source comprises at least nitrogen;
- and
- c) said carbon-hydrogen source methylamine.
Dependencies are inferred from the claim text.