Film formation method and apparatus for semiconductor process

A film formation method for a semiconductor process for forming an insulating film on a target substrate by CVD, in a process field configured to be selectively supplied with a first process gas containing a carbon hydride gas, a second process gas containing a nitriding gas or oxynitriding gas, and a third process gas containing a boron-containing gas, the method alternately comprising:

• a first step of performing supply of the first and third process gases to the process field while stopping supply of the second process gas to the process field;
• a second step of stopping supply of the first, second, and third process gases to the process field;
• a third step of performing supply of the second process gas to the process field while stopping supply of the first and third process gases to the process field;
• and
• a fourth step of stopping supply of the first, second, and third process gases to the process field.

A film formation apparatus for a semiconductor process, comprising:

• a process container having a process field configured to accommodate a target substrate;
• a support member configured to support the target substrate inside the process field;
• a heater configured to heat the target substrate inside the process field;
• an exhaust system configured to exhaust gas inside the process field;
• a first process gas supply circuit configured to supply a first process gas containing a silane family gas to the process field;
• a second process gas supply circuit configured to supply a second process gas containing a nitriding gas or oxynitriding gas to the process field;
• a third process gas supply circuit configured to supply a third process gas containing a carbon hydride gas to the process field;
• and
• a control section configured to control an operation of the apparatus,
• wherein, in order to form an insulating film on the target substrate by CVD, the control section alternately executes
• a first step of performing supply of the first and third process gases to the process field while stopping supply of the second process gas to the process field;
• a second step of stopping supply of the first, second, and third process gases to the process field;
• a third step of performing supply of the second process gas to the process field while stopping supply of the first and third process gases to the process field;
• and
• a fourth step of stopping supply of the first, second, and third process gases to the process field.

A film formation apparatus for a semiconductor process, comprising:

• a process container having a process field configured to accommodate a target substrate;
• a support member configured to support the target substrate inside the process field;
• a heater configured to heat the target substrate inside the process field;
• an exhaust system configured to exhaust gas inside the process field;
• a first process gas supply circuit configured to supply a first process gas containing a carbon hydride gas to the process field;
• a second process gas supply circuit configured to supply a second process gas containing a nitriding gas or oxynitriding gas to the process field;
• a third process gas supply circuit configured to supply a third process gas containing a boron-containing gas to the process field;
• and
• a control section configured to control an operation of the apparatus,
• wherein, in order to form an insulating film on the target substrate by CVD, the control section alternately executes
• a first step of performing supply of the first and third process gases to the process field while stopping supply of the second process gas to the process field;
• a second step of stopping supply of the first, second, and third process gases to the process field;
• a third step of performing supply of the second process gas to the process field while stopping supply of the first and third process gases to the process field;
• and
• a fourth step of stopping supply of the first, second, and third process gases to the process field.

A computer readable medium containing program instructions for execution on a processor, which is used for a film formation apparatus for a semiconductor process for forming an insulating film on a target substrate by CVD, in a process field configured to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas or oxynitriding gas, and a third process gas containing a carbon hydride gas, wherein the program instructions, when executed by the processor, cause the film formation apparatus to execute

• a first step of performing supply of the first and third process gases to the process field while stopping supply of the second process gas to the process field;
• a second step of stopping supply of the first, second, and third process gases to the process field;
• a third step of performing supply of the second process gas to the process field while stopping supply of the first and third process gases to the process field;
• and
• a fourth step of stopping supply of the first, second, and third process gases to the process field.

A computer readable medium containing program instructions for execution on a processor, which is used for a film formation apparatus for a semiconductor process for forming an insulating film on a target substrate by CVD, in a process field configured to be selectively supplied with a first process gas containing a carbon hydride gas, a second process gas containing a nitriding gas or oxynitriding gas, and a third process gas containing a boron-containing gas, wherein the program instructions, when executed by the processor, cause the film formation apparatus to execute

• a first step of performing supply of the first and third process gases to the process field while stopping supply of the second process gas to the process field;
• a second step of stopping supply of the first, second, and third process gases to the process field;
• a third step of performing supply of the second process gas to the process field while stopping supply of the first and third process gases to the process field;
• and
• a fourth step of stopping supply of the first, second, and third process gases to the process field.