Process for producing yttrium oxide thin films
OwnerMatti Putkoneninventor
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Abstract
This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapour-phase pulses of at least one metal source material, and at least one oxygen source material are fed into a reaction space and contacted with the substrate. According to the invention, an yttrium source material and a zirconium source material are alternately used as the metal source material so as to form an yttrium-stabilised zirconium oxide (YSZ) thin film on a substrate.
Claims17
A method for producing an yttrium oxide thin film on a substrate in a reaction space by an atomic layer deposition (ALD)-type process, said method comprising:
- multiple self-limiting deposition cycles, each cycle comprising alternately feeding into the reaction space vapor phase pulses of an yttrium source material and an oxygen source material, wherein the yttrium source material is a cyclopentadienyl compound or a derivative of a cyclopentadienyl compound, and wherein the yttrium oxide thin film is grown at a temperature of 200 to 400° C.
A method for producing an yttrium oxide thin film on a substrate in a reaction space by an atomic layer deposition (ALD)-type process, said method comprising:
- alternately feeding into said reaction space vapor phase pulses of an yttrium cyclopentadienyl compound and water in multiple deposition cycles wherein the deposition rate is essentially constant in an atomic layer deposition (ALD) temperature window.
An atomic layer deposition (ALD) process for depositing yttrium oxide thin films on a substrate in a reaction space comprising the steps of:
- a) feeding a vapor-phase pulse of an yttrium source chemical into the reaction space, such that the yttrium source material adsorbs to the substrate in a self-limiting manner, the yttrium source chemical being a cyclopentadienyl compound or derivative of a cyclopentadienyl compound;
- b) removing unreacted vapor phase yttrium source chemical from the reaction space;
- c) feeding a vapor-phase pulse of an oxygen source chemical into the reaction space to react with the adsorbed yttrium source material in a self-limiting surface reaction;
- d) removing unreacted oxygen source chemical from the reaction space;
- and
- e) repeating steps a) through d) to deposit an yttrium oxide thin film of a desired thickness, and wherein the yttrium oxide thin films are deposited at a temperature of 200 to 400° C.
Dependencies are inferred from the claim text.