Semiconductor device having oxidized metal film and manufacture method of the same

A method for manufacturing a semiconductor device comprising:

• heating a substrate having an insulation film thereon to a first substrate temperature, the insulating film having a recessed portion formed in a surface thereof;
• forming a first metal film at a second substrate temperature lower than the first substrate temperature;
• oxidizing at least part of the first metal film in an oxidizing ambient at reduced pressure;
• and
• forming a second metal film on the first metal film at a third substrate temperature lower than the first substrate temperature.

A method for manufacturing a semiconductor device, comprising:

• heating an insulation film to a first substrate temperature, the insulating film having a recessed portion formed in a surface thereof;
• supplying a source gas to be adsorbed to a surface of the recessed portion at a second substrate temperature lower than the first substrate temperature;
• exhausting residual source gas which has not adsorbed to the surface of the recessed portion;
• and
• irradiating light to the surface of the recessed portion to decompose molecules of the source gas adsorbed to the surface of the recessed portion and form a metal film made of atoms contained in the molecules of the source gas on the surface of the recessed portion.