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US 7,351,654 B2Granted
Semiconductor device and method for producing the same
AssigneeElpida Memory, Inc.
InventorsNorishiro Komatsu, Fumiki Aiso, Toshiyuki Hirota
Life of this patent
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Abstract
A method for producing a semiconductor device includes the steps of forming silicon crystal nuclei on a substrate, depositing first amorphous silicon, depositing second amorphous silicon, and crystallizing the first amorphous silicon and the second amorphous silicon by allowing the crystal nuclei to grow in the solid phase.
Claims20
A method for producing a semiconductor device, comprising the steps in order of:
- forming isolated silicon crystal nuclei on a substrate;
- depositing first amorphous silicon directly on the isolated silicon crystal nuclei;
- depositing second amorphous silicon directly on the first amorphous silicon;
- and
- crystallizing the first amorphous silicon and the second amorphous silicon by growing the crystal nuclei in the solid phase.
2 more elements
A method for producing a semiconductor device, comprising the steps of:
- forming silicon crystal nuclei on a substrate;
- depositing first amorphous silicon;
- depositing second amorphous silicon;
- and
- crystallizing the first amorphous silicon and the second amorphous silicon by growing the crystal nuclei in the solid phase,
- wherein a contact hole on the substrate is filled with the silicon crystal nuclei, the first amorphous silicon, and the second amorphous silicon to form a contact plug.
3 more elements
A method for producing a semiconductor device, comprising the steps of:
- forming silicon crystal nuclei on a substrate;
- depositing first amorphous silicon;
- depositing second amorphous silicon;
- and
- crystallizing the first amorphous silicon and the second amorphous silicon by growing the crystal nuclei in the solid phase,
- wherein a gate electrode or wiring is formed with the first and second amorphous silicon deposited on the substrate.
3 more elements
Dependencies are inferred from the claim text.