Laser annealing method and laser annealing device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsNaoto Kusumoto, Shunpei Yamazaki, Koichiro Tanaka
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Abstract
In order to promote an effect of laser annealing in respect of a semiconductor film, moisture is intentionally included in an atmosphere in irradiating laser beam to the semiconductor film by which a temperature holding layer comprising water vapor is formed on the surface of the semiconductor film in irradiating the laser beam and the laser annealing operation can be performed effectively.
Claims52
A method for forming a semiconductor film comprising:
- forming a semiconductor film over a substrate;
- and
- blowing a gas flow to a portion of said semiconductor film while irradiating a laser light to said portion of said semiconductor film to crystallize said semiconductor film,
- wherein said substrate is maintained at a temperature of −10° C. to 100° C. during the irradiation of said laser light.
A method for forming a semiconductor film comprising:
- forming a semiconductor film over a substrate;
- and
- blowing a gas flow to a portion of said semiconductor film while irradiating a laser light to said portion of said semiconductor film to crystallize said semiconductor film,
- wherein said gas flow comprises a nitrogen gas.
A method for forming a semiconductor film comprising:
- forming a semiconductor film over a substrate;
- providing said semiconductor film with an element for expediting crystallization;
- thermally annealing said semiconductor film provided with said element for expediting crystallization;
- and
- subsequently blowing a gas flow to a portion of said semiconductor film while irradiating a laser light to said portion of said semiconductor film,
- wherein said substrate is maintained at a temperature of −10° C. to 100° C. during the irradiation of said laser light.
A method for forming a semiconductor film comprising:
- forming a semiconductor film over a substrate;
- providing said semiconductor film with an element for expediting crystallization;
- thermally annealing said semiconductor film provided with said element for expediting crystallization;
- and
- subsequently blowing a gas flow to a portion of said semiconductor film while irradiating a laser light to said portion of said semiconductor film,
- wherein said gas flow comprises a nitrogen gas.
A method for forming a semiconductor film comprising:
- forming a semiconductor film over a substrate;
- and
- blowing a gas flow to a portion of said semiconductor film while irradiating a laser light to said portion of said semiconductor film to crystallize said semiconductor film,
- wherein a direction of blowing gas flow is different from a direction of irradiating said laser light.
Dependencies are inferred from the claim text.