Methods of fabricating double-sided hemispherical silicon grain electrodes and capacitor modules

A method of forming a semiconductor device, comprising:

• forming a dual-sided bottom electrode layer having a thickness in the range of about 300 to 500 Å using a smooth polysilicon over interior surfaces of a container formed in a substrate;
• removing any smooth polysilicon layer formed over the substrate and around the container opening to expose the upper surface of the substrate;
• removing the substrate to expose a portion of outside surface of the formed smooth polysilicon layer to form the dual-sided smooth polysilicon container;
• depositing a barrier layer over the dual-sided smooth polysilicon layer such that the barrier layer fills the container and around the container;
• removing the barrier layer to form a recess such that the recess exposes a top portion of the formed dual-sided smooth polysilicon layer;
• nitridizing the exposed top portion of the dual-sided smooth polysilicon layer;
• removing the remaining barrier layer to expose the polysilicon layer of the dual-sided bottom electrode;
• and
• forming a HSG polysilicon layer over the interior surfaces of the smooth polysilicon layer within the container.

A method of forming a semiconductor device, comprising:

• providing a substrate comprising a first insulative layer, an overlying etch stop layer, an overlying second insulative layer, and a container extending through the insulative layers and the etch stop layer to the substrate;
• forming a dual-sided bottom electrode layer of about 300 to 500 Å by using a smooth polysilicon over interior surfaces of the container;
• removing any smooth polysilicon layer formed over the substrate and around the container opening to expose the upper surface of the substrate;
• removing the substrate to expose a portion of outside surface of the formed smooth polysilicon layer to form the dual-sided smooth polysilicon container;
• depositing a barrier layer of about 500 to 1000 Å over the formed smooth polysilicon layer such that the deposited barrier layer fills within and around the dual-sided bottom electrode layer;
• removing the barrier layer to form a recess to expose a top potion of about 200 to 500 Å of the formed smooth polysilicon;
• nitridizing the exposed top portion of polysilicon to form a nitridation layer of about 25 to 30 Å thick;
• removing the remaining barrier layer to expose the smooth polysilicon layer of the dual-sided bottom electrode;
• and
• forming a HSG polysilicon layer over the interior surfaces of the smooth polysilicon layer within the container.

A method of forming a semiconductor device, comprising:

• providing a substrate comprising an insulative layer having a plurality of containers therein;
• forming a conformal layer of doped smooth polysilicon over an insulative layer disposed on a substrate and within a plurality of containers formed in the insulative layer;
• removing the insulative layer to expose a portion of outside surface of the formed smooth polysilicon layer to form dual-sided smooth polysilicon containers;
• depositing a barrier layer over the smooth polysilicon layer such that the barrier layer fills within and around the containers;
• dry etching to remove the barrier layer such that the dry etching forms a recess around the containers to expose about 200 to 500 Å of top portion of the formed polysilicon layer;
• nitridizing the exposed polysilicon layer to form a nitride layer of about 25 to 30 Å thick;
• removing remaining barrier layer to expose the formed dual-sided smooth polysilicon layer;
• and
• forming a HSG polysilicon layer over the interior surfaces of the smooth polysilicon layer within the container.

A method of forming a semiconductor device comprising:

• fabricating an integrated memory circuit device including an array of memory cells, wherein each of the memory cells includes a double-sided container electrode, fabricating the integrated memory circuit device including:
• providing a substrate comprising an insulative layer having a plurality of containers therein;
• forming a conformal layer of doped smooth polysilicon over an insulative layer disposed on a substrate and within a plurality of containers formed in the insulative layer;
• removing the insulative layer to expose a portion of outside surface of the formed smooth polysilicon layer to form dual-sided smooth polysilicon containers;
• depositing a barrier layer over the smooth polysilicon layer such that the barrier layer fills within and around the containers;
• dry etching to remove the barrier layer such that the dry etching forms a recess within and around the containers to expose about 200 to 500 Å of top portion of the formed polysilicon layer;
• nitridizing the exposed polysilicon layer to form a nitride layer of about 25 to 30 Å thick over the exposed polysilicon layer;
• removing remaining barrier layer to expose the formed dual-sided smooth polysilicon layer;
• and
• forming a HSG polysilicon layer over interior surfaces of the smooth polysilicon layer formed within the container.