Scanning laser thermal annealing
AssigneeAdvanced Micro Devices, Inc.
InventorsCyrus E. Tabery, Eric N. Paton, Bin Yu, Qi Xiang, Robert B. Ogle
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes forming a gate electrode over a substrate, implanting dopants into the substrate and activating the dopants using laser thermal annealing. During annealing, the laser and substrate are moved relative to one another, and the movement of the laser and the substrate relative to one another does not pause between and during activating one portion of the source/drain regions and activating another portion of the source/drain regions. Each pulse from the laser can respectively irradiate different portions of the source/drain regions, and a spot area of the laser is less than 50 millimeter2.
Claims7
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a gate electrode over a substrate;
- introducing ions into the substrate to form source/drain regions in the substrate proximate to the gate electrode;
- activating a portion of the source/drain regions by laser thermal annealing using a laser;
- moving the laser and the substrate relative to one another;
- and
- activating another portion of the source/drain regions by laser thermal annealing using the laser, wherein
- each pulse from the laser respectively irradiates non-identical portions of the source/drain regions, and
- a spot area of the laser on the substrate is less than 50 millimeters2.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a gate electrode over a substrate;
- introducing ions into the substrate to form source/drain regions in the substrate proximate to the gate electrode;
- activating a portion of the source/drain regions by laser thermal annealing using a laser;
- moving the laser and the substrate relative to one another;
- and
- activating another portion of the source/drain regions by laser thermal annealing using the laser,
- wherein a spot area of the laser on the substrate is less than 50 millimeters2.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a gate electrode over a substrate;
- introducing ions into the substrate to form source/drain regions in the substrate proximate to the gate electrode;
- activating a portion of the source/drain regions by laser thermal annealing using a pulse of laser energy from a laser;
- moving the laser and the substrate relative to one another;
- and
- activating another portion of the source/drain regions by laser thermal annealing using another pulse of laser energy from the laser, wherein
- the laser and the substrate move relative to one another after each pulse of laser energy and each portion of the source/drain regions receives more than one single pulse of energy from the laser, and
- a spot area of the laser on the substrate is less than 50 millimeters2.
Dependencies are inferred from the claim text.