MIS semiconductor device and method of fabricating the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Yasuhiko Takemura
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Abstract
The invention is concerned with the fabrication of a MIS semiconductor device of high reliability by using a low-temperature process. Disclosed is a method of fabricating a MIS semiconductor device, wherein doped regions are selectively formed in a semiconductor substrate or a semiconductor thin film, provisions are then made so that laser or equivalent high-intensity light is radiated also onto the boundaries between the doped regions and their adjacent active region, and the laser or equivalent high-intensity light is radiated from above to accomplish activation.
Claims5
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor island on an insulating surface;
- forming a gate insulating film on the semiconductor island;
- forming a conductive film on the gate insulating film;
- patterning the conductive film to form a gate electrode;
- introducing ions of an impurity into portions of the semiconductor island using said gate electrode as a mask to form impurity regions in the semiconductor island with a channel forming region interposed therebetween, wherein said gate electrode has sloped side surfaces;
- etching side surfaces of the gate electrode after the introduction of said impurity;
- and
- irradiating said impurity regions with a light to activate said impurity regions while covering said channel region with the gate electrode after etching said side surfaces.
Dependencies are inferred from the claim text.