Methods of forming semiconductor device

A method of forming a semiconductor device, comprising:

• forming a three-dimensional structure formed of a semiconductor on a semiconductor substrate;
• and
• isotropically doping the three-dimensional structure by performing a plasma doping process using a first source gas and a second source gas, wherein the first source gas includes n-type or p-type impurity elements and the second source gas includes a dilution element regardless of the electrical characteristic of a doped region,
• wherein the forming of the three-dimensional structure comprises:
• forming a fin protruded upward over the semiconductor substrate;
• forming a gate insulating layer on the surface of the fin;
• and
• forming a gate electrode on the gate insulating layer, the gate electrode crossing over the fin, wherein the fin of both sides of the gate electrode is the three-dimensional structure.

A method of forming a semiconductor device, comprising:

• forming a three-dimensional structure formed of a semiconductor on a semiconductor substrate;
• and
• isotropically doping the three-dimensional structure by performing a plasma doping process using a first source gas and a second source gas, wherein the first source gas includes n-type or p-type impurity elements and the second source gas includes a dilution element regardless of the electrical characteristic of a doped region,
• wherein the forming of the three-dimensional structure comprises forming a channel region including at least one channel pattern spaced apart upwardly over the semiconductor substrate, the channel region being the three-dimensional structure and the plasma doping being performed such that impurities are doped through bottom and side surfaces of the channel pattern,
• wherein the forming of the channel region comprises:
• alternately forming a sacrificial layer and a channel layer over the semiconductor substrate at least one time, wherein the sacrificial layer and the channel layer have different etch selectivity with respect to each other, the channel layer being formed of a semiconductor layer;
• patterning the channel layer and the sacrificial layer in sequence to form a sacrificial pattern and a channel pattern which are alternately stacked at least once;
• forming a pair of vertical patterns extended upward over the semiconductor substrate, wherein one pair of opposite side surfaces of the sacrificial and channel patterns contact the pair of vertical patterns, respectively, and the other pair of side surfaces of the sacrificial and channel patterns are exposed, the one pair of opposite side surfaces being perpendicular to the other pair of opposite side surfaces;
• and
• selectively removing the exposed sacrificial pattern.

A method of forming a semiconductor device, comprising:

• forming a three-dimensional structure formed of a semiconductor on a semiconductor substrate;
• and
• isotropically doping the three-dimensional structure by performing a plasma doping process using a first source gas and a second source gas, wherein the first source gas includes n-type or p-type impurity elements and the second source gas includes a dilution element regardless of the electrical characteristic of a doped region,
• wherein the doping by the isotropically plasma doping process comprises:
• loading the semiconductor substrate having the three-dimensional structure into a process chamber;
• converting the first and second source gases into a plasma state outside the process chamber;
• supplying the first and second source gases in plasma state into the process chamber;
• isotropically doping impurity ions and dilution ions of the first and second source gases in plasma state into the three-dimensional structure;
• and
• unloading the semiconductor substrate from the process chamber.

A method of forming a semiconductor device, comprising:

• forming a three-dimensional structure formed of a semiconductor on a semiconductor substrate;
• and
• isotropically doping the three-dimensional structure by performing a plasma doping process using a first source gas and a second source gas, wherein the first source gas includes n-type or p-type impurity elements and the second source gas includes a dilution element regardless of the electrical characteristic of a doped region,
• wherein the doping by the isotropic plasma doping process comprises:
• loading the semiconductor substrate having the three-dimensional structure into a process chamber;
• supplying the first and second source gases into the process chamber;
• converting the first and second source gases into a plasma state by applying a plasma energy to the process chamber;
• isotropically doping impurity ions and dilution ions of the first and second source gases in plasma state into the three-dimensional structure;
• and
• unloading the semiconductor substrate from the process chamber.