Method of manufacturing thin film transistor substrate

A method of manufacturing a thin film transistor substrate, the method comprising:

• forming a gate wire on a substrate, the gate wire comprising a gate line, a gate electrode and a storage electrode;
• forming a gate insulating layer covering the gate wire;
• forming a semiconductor layer and a data wire comprising a data line, a source electrode, and a drain electrode by sequentially forming an amorphous silicon layer and a data conductive layer on the gate insulating layer;
• forming a passivation layer on the data wire;
• forming an organic layer covering the passivation layer;
• forming a concave portion in the organic layer by partially removing a portion of the organic layer that overlaps the storage electrode;
• planarizing a rugged pattern located on a bottom surface of the concave portion;
• and
• forming an opening extending to a surface of the passivation layer by removing the planarized organic layer from the concave portion.