Semiconductor device and a method of manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Setsuo Nakajima, Ritsuko Kawasaki
Life of this patent
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Abstract
To provide a technique required for purifying the interface between an active layer and an insulating film. On a substrate (101), a gate wiring (103) is formed and the surface thereof is covered with a gate oxide film (104). Then, a first insulating film (105a), a second insulating film (105b), a semiconductor film (106) and a protective film (107) are sequentially formed and layered without exposing them to the air. Further, the semiconductor film (106) is irradiated with laser light through the protective film (107). In this way, a TFT may be given good characteristics by completely purifying the interface of the semiconductor film.
Claims22
A semiconductor device comprising:
- a gate wiring, a gate insulating film, a semiconductor layer and an interlayer insulating film for covering said semiconductor layer formed over a substrate;
- wherein said gate wiring is covered with a multi-layer comprising said gate insulating film, said semiconductor layer and said interlayer insulating film at a portion where said semiconductor layer overlaps said gate wiring,
- wherein said gate wiring is in contact with said interlayer insulating film at a gate contact portion.
A semiconductor device comprising:
- a gate wiring, a gate insulating film, a semiconductor layer and an interlayer insulating film for covering said semiconductor layer formed over a substrate;
- wherein said gate wiring is covered with a multi-layer comprising said gate insulating film, said semiconductor layer and said interlayer insulating film at a portion where said semiconductor layer overlaps said gate wiring,
- wherein said gate wiring is in contact with said interlayer insulating film at a gate contact portion,
- wherein an external wiring is connected to said gate wiring at said gate contact portion through said interlayer insulating film.
A semiconductor device comprising:
- at least one thin film transistor formed over a substrate, said thin film transistor comprising:
- a gate wiring formed over said substrate;
- a gate insulating film over said gate wiring;
- a semiconductor layer formed over said gate insulating film;
- and
- an interlayer insulating film formed over said semiconductor layer,
- wherein said gate wiring is in contact with said interlayer insulating film at a gate contact portion where an external wiring is connected to said gate wiring.
A semiconductor device comprising:
- at least one thin film transistor formed over a substrate, said thin film transistor comprising:
- a gate wiring formed over said substrate;
- a gate insulating film over said gate wiring;
- a semiconductor layer formed over said gate insulating film;
- a protective film formed over said semiconductor layer;
- an interlayer insulating film formed over said protective film,
- wherein said gate wiring is in contact with said interlayer insulating film at a gate contact portion where an external wiring is connected to said gate wiring.
A semiconductor device comprising:
- a TFT forming portion comprising a gate wiring covered with a multi-layer comprising a gate insulating film, a semiconductor layer and an interlayer insulating film;
- and
- a gate contact portion comprising said gate wiring in contact with said interlayer insulating film.
A semiconductor device comprising:
- a TFT forming portion comprising a gate wiring covered with a multi-layer comprising a gate insulating film, a semiconductor layer and an interlayer insulating film;
- and
- a gate contact portion comprising said gate wiring in contact with said interlayer insulating film, and a external wiring connected to said gate wiring through said interlayer insulating film.
Dependencies are inferred from the claim text.