Method for forming a bottom gate thin film transistor using a blend solution to form a semiconducting layer and an insulating layer
AssigneePalo Alto Research Center Incorporated
InventorAna C. Arias
Life of this patent
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Abstract
An improved method of forming a semiconducting polymer layer protected by an insulating polymer layer is described. In the method, a material for forming a semiconducting polymer and an insulating polymer are dissolved in a solvent. The blended solution is deposited on a substrate where the semiconducting polymer and insulating polymer segregate. Upon evaporation of the solvent, the semiconducting material forms the active region of a TFT and the insulating polymer minimizes the exposure of the semiconducting polymer to air.
Claims27
A method of forming a bottom gate thin film transistor TFT comprising the operations of:
- forming a source over a first substrate region;
- forming a drain over a second substrate region;
- depositing a blend solution between the source and drain, the blend solution including material designed to form a semiconducting polymer and material designed to form an insulator such that after deposition, a polymer semiconducting layer forms between the source and drain of the bottom gate thin film transistor.
A structure for forming a bottom gate polymer thin film transistor comprising:
- a substrate;
- a source formed over a first portion of the substrate;
- a drain formed over a second portion of the substrate;
- and a blend solution deposited over a gate and between the source and the drain, the blend solution including a blend solution designed to form a polymer semiconductor and an insulating material layer.
An intermediate structure for fabrication of a display system including a plurality of bottom gate thin film transistors, the intermediate structure comprising:
- a substrate;
- a plurality of sources for the plurality of bottom gate thin film transistors formed over a first portion of the substrate;
- a plurality of drains for the plurality of drains formed over a second portion of the substrate;
- and,
- a blend solution deposited over a plurality of gates positioned between each source and a corresponding drain, the blend solution including a blend solution designed to form a polymer semiconductor and an insulating material layer.
Dependencies are inferred from the claim text.