High-powered light emitting device with improved thermal properties

A method of operating a light emitting device, the method comprising:

• forming a first semiconductor layer of a first conductivity type;
• forming an active region overlying the first semiconductor layer;
• forming a second semiconductor layer of a second conductivity type overlying the active region;
• selecting at least one of an area, thickness, and material of one of a first contact and a second contact to reduce a temperature gradient within the device during operation to less than about 30 K/mm;
• forming the first contact electrically connected to the first semiconductor layer;
• forming a second contact electrically connected to the second semiconductor layer;
• and
• operating the device at a current density greater than 143 A/cm2;
• wherein a maximum temperature gradient within the device is less than 30 K/mm during operation.