Method for applying a resist layer, uses of adhesive materials, and adhesive materials and resist layer
AssigneeInfineon Technologies AG
InventorsWerner Kröninger, Manfred Schneegans
Life of this patent
Estimating the term…
Abstract
A method in which a resist layer is applied to a base layer is disclosed. The resist layer includes an adhesive material, and the adhesive force of the adhesive material decreases or increases during an irradiation process. Residues of the resist layer may be stripped using the disclosed method.
Claims29
A method for the application of a resist layer, comprising:
- applying a resist layer to a base layer;
- selectively irradiating the resist layer;
- and
- developing the resist layer,
- wherein the resist layer is applied to the base layer in the solid state;
- and
- wherein a matching resist piece is cut out along an edge of a wafer after the application of the resist layer.
A method for patterning a resist layer, comprising:
- applying resist layer to a base layer;
- selectively irradiating the resist layer;
- and
- developing the resist layer;
- wherein the resist layer is bonded to the base layer in the solid state and comprises an adhesive whose adhesive force changes with respect to the adhesive force at the base area during the irradiation;
- and
- providing an antireflection layer with the resist layer before the application of the resist layer to the base layer, said antireflection layer preventing a reflection of the radiation at the resist layer.
A method for patterning a resist layer, comprising:
- applying a resist layer to a base layer;
- selectively irradiating the resist layer;
- and
- developing the resist layer;
- wherein the resist layer is bonded to the base layer in the solid state and comprises an adhesive whose adhesive force changes with respect to the adhesive force at the base area during the irradiation comprising using an organic solvent as a developer;
- and
- where the organic solvent comprises N methylpyrrolidone.
A method for patterning a resist later, comprising:
- applying a resist layer to a base layer;
- selectively irradiating the resist layer;
- and
- developing the resist layer;
- wherein the resist layer is bonded to the base layer in the solid state and comprises an adhesive whose adhesive force changes with respect to the adhesive force at the base area during the irradiation comprising using an organic solvent as a developer;
- and
- where the organic solvent comprises dimethyl sulfoxide.
A method for the application of a resist layer, comprising:
- applying a resist layer to a base layer;
- selectively irradiating the resist layer;
- and
- developing the resist layer.
- wherein the resist layer is applied to the base layer in the solid state;
- and
- wherein the resist layer is formed on a wafer and prestamped to a size which is at least 2 mm smaller than a diameter of the wafer.
A method for patterning a resist layer, comprising:
- applying a resist layer to a base layer;
- selectively irradiating the resist layer;
- and
- developing the resist layer;
- wherein the resist layer is bonded to the base layer in the solid state and comprises an adhesive whose adhesive force changes with respect to the adhesive force at the base area during the irradiation;
- and
- providing an antireflection layer with the resist layer before the application of the resist layer to the base layer, said antireflection layer reducing a reflection of the radiation at the resist layer.
Dependencies are inferred from the claim text.