Tungsten metal removing solution and method for removing tungsten metal by use thereof
AssigneeKanto Kagaku Kabushiki Kaisha
InventorsToshikazu Shimizu, Kaori Watanabe, Hidemitsu Aoki
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Abstract
A removing solution for removing tungsten metal which causes a film formation on a semiconductor substrate or adheres to it, wherein orthoperiodic acid and water are contained.
Claims4
A removing solution for removing tungsten metal which causes a film formation on a semiconductor substrate or adheres to it, wherein said removing solution consists of orthoperiodic acid, hydrofluoric acid and water, and the content of orthoperiodic acid is about 5 to 50% by mass and the content of hydrofluoric acid is about 0.1 to 1% by mass, wherein the dissolution rate of tungsten metal from the semiconductor substrate is not less than 200 nm/min.
Dependencies are inferred from the claim text.