Peeling method and method of manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsToru Takayama, Junya Maruyama, Shunpei Yamazaki
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Abstract
There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.
Claims28
A method of peeling a layer to be peeled from a substrate, comprising:
- forming a first material layer on the substrate, wherein the first material layer includes tensile stress;
- forming a second material layer on the first material layer, wherein the second material layer includes compressive stress;
- forming a layer to be peeled over the second material layer;
- partially irradiating laser light to a portion of the first material layer;
- and
- peeling the layer to be peeled from the substrate to which the first material layer is provided at one of an inner portion of the second material layer and an interface between the second material layer and the first material layer,
- wherein laser light is irradiated to the first material layer from a side of the layer to be peeled.
A method of peeling a layer to be peeled from a substrate, comprising:
- forming a first material layer on the substrate, wherein the first material layer includes tensile stress;
- forming a second material layer on the first material layer, wherein the second material layer includes compressive stress;
- forming a layer to be peeled over the second material layer;
- partially irradiating laser light to a portion of the first material layer;
- bonding a support to the layer to be peeled;
- and
- peeling the layer to be peeled to which the support is bonded from the substrate to which the first material layer is provided at one of an inner portion of the second material layer and an interface between the second material layer and the first material layer,
- wherein laser light is irradiated to the first material layer from a side of the layer to be peeled.
A method of manufacturing a semiconductor device, comprising
- forming a first material layer on a substrate, wherein the first material layer includes tensile stress;
- forming a second material layer on the first material layer, wherein the second material layer includes compressive stress;
- forming a layer to be peeled which includes an element over the second material layer;
- bonding a support to the layer to be peeled which includes the element;
- peeling the layer to be peeled and the support from the substrate;
- and
- bonding a transfer body to the layer to be peeled which includes the element to sandwich the element between the support and the transfer body,
- wherein laser light is partially irradiated to a portion of the first material layer before the peeling, and
- wherein laser light is irradiated to the first material layer from a side of the layer to be peeled.
A method of peeling a layer to be peeled from a substrate, comprising:
- forming a first material layer on the substrate, wherein the first material layer;
- forming a second material layer on the first material layer;
- forming a layer to be peeled over the second material layer;
- partially irradiating laser light to a portion of the first material layer;
- and
- peeling the layer to be peeled from the substrate to which the first material layer is provided at one of an inner portion of the second material layer and an interface between the second material layer and the first material layer,
- wherein laser light is irradiated to the first material layer from a side of the layer to be peeled.
A method of peeling a layer to be peeled from a substrate, comprising:
- forming a first material layer on the substrate;
- forming a second material layer on the first material layer;
- forming a layer to be peeled over the second material layer;
- partially irradiating laser light to a portion of the first material layer;
- bonding a support to the layer to be peeled;
- and
- peeling the layer to be peeled to which the support is bonded from the substrate to which the first material layer is provided at one of an inner portion of the second material layer and an interface between the second material layer and the first material layer,
- wherein laser light is irradiated to the first material layer from a side of the layer to be peeled.
A method of manufacturing a semiconductor device, comprising
- forming a first material layer on a substrate;
- forming a second material layer on the first material layer;
- forming a layer to be peeled which includes an element over the second material layer;
- bonding a support to the layer to be peeled which includes the element;
- peeling the layer to be peeled and the support from the substrate;
- and
- bonding a transfer body to the layer to be peeled which includes the element to sandwich the element between the support and the transfer body,
- wherein laser light is partially irradiated to a portion of the first material layer before the peeling, and
- wherein laser light is irradiated to the first material layer from a side of the layer to be peeled.
Dependencies are inferred from the claim text.