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US 7,351,282 B2Granted
Cutting method and apparatus for ingot, wafer, and manufacturing method of solar cell
AssigneeKabushiki Kaisha Y.Y.L.
InventorSataro Yamaguchi
Life of this patent
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Abstract
Cutting method of ingot into wafers along cleavage plane. Onto surface of single crystal ingot 10 is implanted ion beam 23 to generate lattice defects in a direction defined by the crystal axes that corresponds to the cleavage plane. Cleavage is generated by applying a shock by a knife edge to the position of the lattice having a cutting face as a cleavage plane. Production time of waters is reduced with a more numbers of sliced wafers from one ingot.
Claims15
A cutting method comprising:
- (a) a step of generating lattice defects in a surface of a single crystal ingot along a direction perpendicular to a central longitudinal axis of said ingot, said direction corresponding to crystal axes of said ingot, and said direction corresponding to a cleavage plane in a crystal structure of said ingot,
- (b) a step of cleaving the ingot by applying a shock to said lattice defects in said surface of the single crystal ingot, thereby cutting the ingot to form a wafer having a cutting face formed as said cleavage plane.
A cutting method for slicing
- an approximately cylindrical ingot into wafers,
- said method comprising:
- (a) irradiating at least partly circumferentially of a surface of said ingot with a working beam in a circumferential direction of said ingot, said circumferential direction being perpendicular to a central longitudinal axis of said ingot;
- and
- (b) generating cleavage at a position of said ingot irradiated with said beam to cut said ingot into a wafer providing a cutting face that corresponds to a plane of said cleavage.
2 more elements
Dependencies are inferred from the claim text.