Temperature detection circuit
AssigneeNEC Electronics Corporation
InventorsTakeshi Mikuni, Akio Tamagawa
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AssigneeNEC Electronics Corporation
InventorsTakeshi Mikuni, Akio Tamagawa
Estimating the term…
A temperature detection circuit according to the present invention includes a potential generating part and a temperature detection part. The potential generating part generates a potential according to an environmental temperature, and the temperature detection part detects a temperature based on a detection potential generated in the potential generated part. The temperature detection part is a resistive load type inverter circuit that outputs a detection signal when the generated potential reaches a threshold voltage. The potential generating part applies the detection potential to the inverter circuit through a temperature sensor including cascaded diodes and an NchMOSFET. The threshold voltage of the inverter circuit is determined based on the NchMOSFET in the inverter circuit, and the NchMOSFET is a MOSFET having the same characteristic as the NchMOSFET of the potential generating part.
A temperature detection circuit, comprising:
Dependencies are inferred from the claim text.