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US 7,350,904 B2Granted
Piezoelectric element, piezoelectric actuator, ink jet recording head, ink jet printer, surface acoustic wave element, frequency filter, oscillator, electronic circuit, thin film piezoelectric resonator, and electronic apparatus
AssigneeSeiko Epson Corporation
InventorsMotohisa Noguchi, Eiju Hirai
Life of this patent
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Abstract
A piezoelectric element is provided that is equipped with a seed layer formed on a base substrate and a piezoelectric film formed on the seed layer. The seed layer is formed of a perovskite type piezoelectric material preferentially oriented to pseudo cubic (100). The piezoelectric film is formed of a relaxor material that has a perovskite type rhombohedral structure, and is preferentially oriented to pseudo cubic (100).
Claims10
A piezoelectric element comprising:
- a seed layer formed on a base substrate;
- and
- a piezoelectric film formed on the seed layer,
- wherein the seed layer is formed of a first perovskite type material whose orientation is oriented to pseudo cubic (100), the first perovskite type material being a piezoelectric material;
- the piezoelectric film is formed of a second perovskite type material oriented to pseudo cubic (100);
- and
- the seed layer is formed of Pb(ZrTi)O3.
4 more elements
A piezoelectric element comprising:
- a seed layer formed on a base substrate;
- and
- a piezoelectric film formed on the seed layer,
- wherein the seed layer is formed of a first perovskite type material oriented to pseudo cubic (100), the first perovskite type material being a piezoelectric material;
- the piezoelectric film is formed of a second perovskite type material having a rhombohedral structure oriented to pseudo cubic (100), the second perovskite type material being a relaxor material;
- and
- the seed layer is formed of Pb(ZrTi)O3.
4 more elements
A piezoelectric element comprising:
- a seed layer formed on a base substrate;
- and
- a piezoelectric film formed on the seed layer,
- wherein the seed layer is formed of a first perovskite type material whose orientation is oriented to pseudo cubic (100), the first perovskite type material being a piezoelectric material;
- the piezoelectric film is formed of a second perovskite type material oriented to pseudo cubic (100), the second perovskite type material being a relaxor material;
- the seed layer is formed of Pb(ZrTi)O3;
- and
- the seed layer includes a plurality of layers, and a composition of each layer among the plurality of layers is different from one another.
5 more elements
A piezoelectric element comprising:
- a seed layer formed on a base substrate;
- and
- a piezoelectric film formed on the seed layer,
- wherein the seed layer is formed of a first perovskite type material oriented to pseudo cubic (100), the first perovskite type material being a piezoelectric material;
- the piezoelectric film is formed of a second perovskite type material having a rhombohedral structure oriented to pseudo cubic (100), the second perovskite type material being a relaxor material;
- and
- the seed layer includes a plurality of layers, and a composition of each layer among the plurality of layers is different from one another.
4 more elements
Dependencies are inferred from the claim text.