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US 7,345,410 B2Granted
Temperature compensation of film bulk acoustic resonator devices
AssigneeAgilent Technologies, Inc.
InventorsKevin J. Grannen, John Choy, Carrie A. Rogers
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Abstract
A resonator. The resonator includes a bottom electrode overlaying at least part of a substrate, a composite structure overlaying at least part of the bottom electrode, and a top electrode overlaying at least part of the composite structure. The composite structure comprises a piezoelectric layer and a compensation layer, and the compensation layer includes silicon dioxide combined with boron.
Claims13
A resonator, comprising:
- a bottom electrode overlaying at least part of a substrate;
- a composite structure overlaying at least part of the bottom electrode, wherein the composite structure comprises a piezoelectric layer and a compensation layer and wherein the compensation layer comprises silicon dioxide combined with boron;
- and
- a top electrode overlaying at least part of the composite structure.
1 more element
A resonator, comprising:
- a bottom electrode overlaying at least part of a substrate, wherein the bottom electrode comprises a bottom under electrode layer, a compensation layer, and a bottom over electrode layer and wherein the compensation layer comprises silicon dioxide combined with boron;
- a piezoelectric layer overlaying at least part of the bottom electrode;
- and
- a top electrode overlaying at least part of the piezoelectric layer.
1 more element
A resonator, comprising:
- a bottom electrode overlaying at least part of a substrate;
- a piezoelectric layer overlaying at least part of the bottom electrode;
- and
- a top electrode overlaying at least part of the piezoelectric layer, wherein the top electrode comprises a top under electrode layer, a compensation layer, and a top over electrode layer and wherein the compensation layer comprises silicon dioxide combined with boron.
1 more element
Dependencies are inferred from the claim text.