Method for packaging a semiconductor device
AssigneeFreescale Semiconductor, Inc.
InventorViswanadam Gautham
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AssigneeFreescale Semiconductor, Inc.
InventorViswanadam Gautham
Estimating the term…
A method for packaging a semiconductor device includes forming through holes (12) in a base substrate (10) and depositing a conductive material (14) on a first side (16) of the base substrate (10) to form a conductive layer (18) such that the conductive material (14) fills the through holes (12). The conductive layer (18) is patterned and etched to form interconnect traces and pads (22). Conductive supports (24) are formed on the pads (22) such that the conductive supports (24) extend through respective ones of the through holes (12).
A method for packaging a stackable semiconductor device, comprising the steps of:
The method for packaging a stackable semiconductor device of claim S, wherein the plurality of conductive supports are substantially parallel to each other.
A method for packaging a semiconductor device, comprising the steps of:
A method for packaging a semiconductor device, comprising the steps of:
Dependencies are inferred from the claim text.
Drawings are temporarily unavailable. Open the PDF at USPTO
From the US filing history. Foreign family members aren’t listed.
Of insulating or insulated package substrates, or of interposers, or of redistribution layers: of vias therein
For connecting multiple chips together: the multiple chips being integrally enclosed
Manufacture or treatment: using batch processing
Package configurations
Term ended 9 Feb 2026 (estimated)
The present invention relates to packaging of semiconductor devices in general and more specifically to a method of forming a stacked package.
In tandem with the sophistication of electronic devices, there is a demand for greater functionality in smaller packages. Stacked die and stacked package three-dimensional (3D) packages have been developed to meet this demand. Typically, stacked die packages are formed by stacking multiple chips on one another. The chips in a stacked die package may be electrically coupled by wire bonding connections or flip chip connections. Stacked packages, on the other hand, are formed by stacking multiple packages on each other, where each package contains a single chip.
However, the formation of stacked die packages presents a number of problems. For instance, when stacked packages having wire bonding connections are formed, usually the upper chip is preferred to be smaller than the lower chip by an amount necessary for the area required to make the wire bonding connections. Accordingly, the mounting area for each successive upper chip is preferred to be progressively smaller, thereby imposing a limit on the number of packages that can be stacked.
The following detailed description of a preferred embodiment of the invention will be better understood when read in conjunction with the appended drawings. The present invention is illustrated by way of example and is not limited by the accompanying figures, in which like references indicate similar elements.
FIGS. 1 through 6 are enlarged cross-sectional views illustrating a method for forming a plurality of stackable semiconductor devices in accordance with an embodiment of the present invention;
FIG. 7 is an enlarged cross-sectional view illustrating a method for stacking a plurality of semiconductor devices in accordance with an embodiment of the present invention; and
The detailed description set forth below in connection with the appended drawings is intended as a description of the presently preferred embodiments of the invention, and is not intended to represent the only form in which the present invention may be practiced. It is to be understood that the same or equivalent functions may be accomplished by different embodiments that are intended to be encompassed within the spirit and scope of the invention.
To achieve the objects and advantages discussed above and others, the present invention provides a method for packaging a semiconductor device. The method includes the steps of forming a plurality of through holes in a base substrate and depositing a conductive material on a first side of the base substrate to form a conductive layer. The conductive material fills the plurality of through holes. The conductive layer is patterned and etched to form a plurality of interconnect traces and a plurality of pads. A plurality of conductive supports is formed on the plurality of pads. The conductive supports extend through respective ones of the plurality of through holes.
The present invention also provides a method for packaging a semiconductor device, including the steps of forming a plurality of through holes in a base substrate, depositing a conductive material on a first side of the base substrate to form a conductive layer, and patterning and etching the conductive layer to form a plurality of interconnect traces and a plurality of pads. The conductive material at least partially fills the plurality of through holes. A plurality of conductive supports is formed on the pads. The conductive supports are substantially parallel with each other, substantially perpendicular to the base substrate, and extend through respective ones of the plurality of through holes. At least one semiconductor die is electrically coupled to the interconnect traces and pads.