Method for patterning electrically conducting poly(phenyl acetylene) and poly(diphenyl acetylene)
AssigneeSpansion LLC
InventorUzodinma Okoronyanwu
Life of this patent
Estimating the term…
Abstract
Disclosed are methods of fabricating a memory cell structure. More specifically, a copper substrate, including but not limited to copper contacts and/or bit lines, can be formed within a metal-containing layer, for example. Optionally, one or more via openings can then be formed in an overlying dielectric layer to expose one or more of the copper contacts and/or bit lines. Copper sulfide material can be formed thereon. Alternatively, a portion of the exposed copper can be converted to copper sulfide (e.g., Cu2S2 or Cu2S). The copper sulfide material can then be exposed to a vapor phase monomer to facilitate selective growth of a conducting polymer.
Claims20
A method of fabricating a memory cell structure comprising:
- providing a copper substrate;
- forming one or more copper sulfide regions on the copper substrate;
- exposing the one or more copper sulfide regions by way of a vapor phase monomer to facilitate growing a conducting polymer material on surfaces of the copper sulfide regions;
- and
- forming at least one of plugs, shallow trench isolation regions, and channel stop regions below the conducting polymer material.
A method of fabricating a memory cell structure comprising:
- providing a semiconductor substrate;
- forming a copper layer overlying the semiconductor substrate;
- forming one or more vias in the copper layer;
- forming copper sulfide material in a bottom portion of the one or more vias in the copper layer, whereby the copper sulfide contacts a surface of the copper layer and reacts with H2S;
- and
- growing a conducting polymer material on exposed copper sulfide surface from a vapor phase monomer.
A system for fabricating a memory cell structure comprising:
- means for providing a copper substrate;
- means for forming one or more copper sulfide regions on the copper substrate;
- and
- means for exposing the one or more copper sulfide regions with a vapor phase monomer to facilitate growing a conducting polymer material on surfaces of the copper sulfide regions;
- means for forming an amorphous carbon layer over the copper substrate before
- means for forming the one or more copper sulfide regions;
- means for forming an antireflective layer over the amorphous carbon layer;
- forming one or more photoresist structures on the antireflective layer;
- means for selectively etching the antireflective layer using the one or more photoresist structures;
- and
- means for selectively etching the amorphous carbon layer using the patterned antireflective layer as a hardmask.
Dependencies are inferred from the claim text.