Semiconductor device having RF shielding and method therefor
AssigneeAmkor Technology, Inc.
InventorsChristopher J. Berry, Christopher M. Scanlan
Life of this patent
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Abstract
A semiconductor device and method of manufacturing has a substrate having a plurality of metal layers. At least one metal layer is exposed on at least one side surface of the semiconductor device. A die is coupled to the substrate. A mold compound encapsulates the die and a top surface of the substrate. A conductive coating is applied to the mold compound and to at least one metal layer exposed on at least one side surface of the substrate.
Claims20
A semiconductor device comprising:
- a substrate having a plurality of metal layers, wherein at least one metal layer is exposed on at least one side surface of the substrate;
- a ledge formed within the substrate;
- a die coupled to the substrate;
- a mold compound encapsulating the die and a first surface of the substrate;
- and
- a conductive coating applied to the mold compound and to at least one metal layer exposed on at least one side surface of the substrate.
A semiconductor device comprising:
- a substrate having a plurality of metal layers, wherein at least one metal layer is exposed on at least one side surface of the semiconductor device;
- a ledge formed within the substrate and exposing the at least one metal layer;
- a die coupled to the substrate;
- a mold compound encapsulating the die and a top surface of the substrate;
- and
- means coupled to the mold compound and to at least one metal layer exposed on at least one side surface of the semiconductor device for minimizing Electro-Magnetic Interference (EMI) radiation and Radio Frequency (RF) radiation.
A method of manufacturing a semiconductor device comprising:
- providing a substrate having a plurality of metal layers;
- coupling a die to a first surface of the substrate;
- encapsulating the first surface of the substrate;
- cutting a surface of the semiconductor device to form a ledge within the substrate and to expose at least one metal layer on the surface of the semiconductor device;
- and
- applying a conductive coating to the mold compound and to at least one metal layer exposed on the surface of the semiconductor device.
A semiconductor device comprising:
- a substrate having a plurality of metal layers, wherein at least one metal layer is exposed on at least one side surface of the substrate;
- a die coupled to a first surface of the substrate;
- a mold compound encapsulating a first surface of the substrate and side surface of the die, a top surface of the die remaining exposed;
- and
- an electroplate layer applied to the mold compound and to at least one metal layer exposed on at least one side surface of the substrate;
- wherein the first surface of the substrate is approximately perpendicular to the at least one side surface of the substrate.
A method of manufacturing a semiconductor device comprising:
- providing a substrate having a plurality of metal layers;
- coupling a die to a first surface of the substrate;
- encapsulating the first surface of the substrate and side surface of the die, a top surface of the die remaining exposed;
- cutting a surface of the semiconductor device to form a ledge within the substrate and to expose at least one metal layer on surface of the semiconductor device;
- and
- applying a seed layer to the first surface of the substrate and the surface of the substrate where the at least one metal layer is exposed, the top surface of the die remaining exposed;
- applying a resist layer on the top surface of the die and the bottom surface of the substrate;
- applying a metal layer to the seed layer;
- and
- stripping the resist layer.
Dependencies are inferred from the claim text.