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US 7,342,169 B2Granted
Phonon-blocking, electron-transmitting low-dimensional structures
AssigneeNextreme Thermal Solutions, Inc.
InventorsRama Venkatasubramanian, Edward Siivola, Thomas Colpitts, Brooks O'Quinn
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Abstract
A thermoelectric structure and device including at least first and second material systems having different lattice constants and interposed in contact with each other, and a physical interface at which the at least first and second material systems are joined with a lattice mismatch and at which structural integrity of the first and second material systems is substantially maintained. The at least first and second material systems have a charge carrier transport direction normal to the physical interface and preferably periodically arranged in a superlattice structure.
Claims45
A thermoelectric structure comprising:
- a superlattice film of at least first and second material systems having different lattice constants and interposed in contact with each other;
- a physical interface at which said at least first and second material systems are joined with a lattice mismatch and at which structural integrity of said first and second material systems is maintained;
- said superlattice film of at least first and second material systems having a charge carrier transport direction normal to said physical interface and the superlattice film having a thickness of at least approximately 1.35 μm wherein said superlattice film of at least first and second material systems and said physical interface comprise a superlattice structure with the lattice mismatch at said interface occurring in a plane of epitaxial growth of said at least two material systems and providing an acoustic mismatch to reduce thermal conduction across said physical interface;
- and
- orthogonally-quantum-confined superlattice phonon-blocking electron-transmitting structures.
2 more elements
A thermoelectric device comprising:
- a heat source plate;
- a heat sink plate operating at an elevated temperature with respect to the heat source plate;
- at least one n-type thermoelectric element including,
- an n-type superlattice film of at least first and second n-type material systems having different lattice constants and interposed in contact with each other,
- a physical interface at which said at least first and second n-type material systems are joined with a lattice mismatch and at which structural integrity of said first and second n-type material systems is maintained, and
- said superlattice film of at least first and second n-type material systems having a charge carrier transport direction normal to said physical interface;
- at least one p-type thermoelectric element electrically connected in series to said at least one n-type thermoelectric element, the at least one p-type thermoelectric element including,
- a p-type superlattice film of at least first and second p-type material systems having different lattice constants and interposed in contact with each other,
- a physical interface at which said at least first and second p-type material systems are joined with a lattice mismatch and at which structural integrity of said first and second p-type material systems is maintained, and
- said p-type superlattice film of at least first and second p-type material systems having a charge carrier transport direction normal to said physical interface and the p-type superlattice film having a thickness of at least approximately 1.35 μm:
- wherein at least one of the n-type and/or p-type superlattice films comprises an epitaxial superlattice film.
8 more elements
A thermoelectric power conversion device comprising:
- a superlattice film of at least first and second material systems having different lattice constants and interposed in contact with each other;
- a physical interface at which said at least first and second material systems are joined with a lattice mismatch and at which structural integrity of said first and second material systems is maintained;
- said superlattice film of at least first and second material systems having a charge carrier transport direction normal to said physical interface and the superlattice film having a thickness of at least approximately 1.35 μm;
- a heat sink connected to the superlattice film of at Least first and second material systems;
- a heat source connected to the heat sink through the superlattice film of at least first and second material systems;
- electrodes connected to the superlattice film of at least first and second material systems and configured to output a thermoelectric voltage;
- and
- a magnetizing mechanism including chemical dopants in thermoelectric nanostructures of the at least first and second material systems, said chemical dopants including magnetic materials.
5 more elements
A thermoelectric heating and cooling device comprising:
- a superlattice film of at least first and second material systems having different lattice constants and interposed in contact with each other;
- a physical interface at which said at least first and second material systems are joined with a lattice mismatch and at which structural integrity of said first and second material systems is maintained;
- said superlattice film of at least first and second material systems having a charge carrier transport direction normal to said physical interface and the superlattice film having a thickness of at least approximately 1.35 μm;
- at least one of a heat sink and a heat source connected to the superlattice film of at least first and second material systems;
- said thermoelectric device configured to direct charge transport to at least one of the heat sink for cooling and the heat source for heating;
- and
- a magnetizing mechanism including chemical dopants in thermoelectric nanostructures of the at least first and second material systems, said chemical dopants including magnetic materials.
4 more elements
Dependencies are inferred from the claim text.