Apparatus and method for investigating parameters of layers deposited on semiconductor wafers
AssigneeMetryx Limited
InventorRobert John Wilby
Life of this patent
Estimating the term…
Abstract
In order to determine the dielectric constant of a layer deposited on a semiconductor wafer (2), the density of the layer is obtained. To obtain that density, the wafer (2) without the layer is weighed in a weighing chamber (4) in which a weighing pan (7) supports the wafer on a weighing balance. The weight of the wafer is determined taking into account the buoyancy exerted by the air on the wafer (2). Then the layer is deposited on the wafer (2) and the weighing operation repeated. Alternatively a reference wafer may be used. If the material of the layer is known, the weight of the layer can be used to derive its density using a thickness measurement. Alternatively, if the density is known, the thickness can be obtained.
Claims12
A computer-based method for determining a dielectric constant of a layer, comprising a carbon doped silicate glass film, deposited on a semiconductor wafer, the method comprising the steps of determining the density of the layer and using a computer in deriving the dielectric constant of the layer from the density of the layer using a predefined relationship between the density and the dielectric constant of the layer.
A machine-readable medium containing instructions which, when executed, are operable to cause a computerized system to carry out a method for determining a dielectric constant of a layer, comprising a carbon doped silicate glass film, deposited on a semiconductor wafer, the method comprising the steps of:
- determining a value for the density of the layer;
- and
- deriving the dielectric constant of the layer from the value for the density of the layer using a predefined relationship between the density of the layer and the dielectric constant of the layer.
Dependencies are inferred from the claim text.