Generation of terahertz radiation in orientation-patterned semiconductors

A method for generating THz radiation, comprising illuminating a semiconductor crystal with an optical pulse train, wherein:

• the semiconductor crystal comprises alternating parallel crystal domains, with each domain having a crystal orientation inverted with respect to adjacent domains;
• the optical pulse train propagates substantially perpendicularly relative to domain boundaries in the semiconductor crystal;
• the THz radiation is generated from the optical pulse train by optical down-conversion mediated by the semiconductor crystal;
• optical path lengths through the crystal domains at least in part determine a frequency of the generated THz radiation;
• the semiconductor crystal is positioned within a laser cavity;
• the optical pulse train comprises resonant intracavity radiation of the laser cavity;
• the laser cavity includes an optical gain medium and a dispersion compensation mechanism;
• and
• the generated THz radiation is directed out of the laser cavity.

A method for generating THz radiation, comprising illuminating a semiconductor crystal with an optical pulse train, wherein:

• the semiconductor crystal comprises alternating parallel crystal domains, with each domain having a crystal orientation inverted with respect to adjacent domains;
• the optical pulse train propagates substantially perpendicularly relative to domain boundaries in the semiconductor crystal;
• the THz radiation is generated from the optical pulse train by optical down-conversion mediated by the semiconductor crystal;
• optical path lengths through the crystal domains at least in part determine a frequency of the generated THz radiation;
• the semiconductor crystal is positioned within an OPO cavity;
• the OPO is synchronously-pumped by a modelocked pump laser;
• the optical pulse train comprises resonant intracavity radiation of the OPO cavity;
• and
• the generated THz radiation is directed out of the OPO cavity.