US 7,335,519 B2 · Method for manufacturing a light-emitting diode

Abstract

A method for manufacturing a light-emitting diode (LED) is disclosed. In the method, a substrate is firstly provided, in which a first conductivity type cladding layer, an active layer, a second conductivity type cladding layer, a superlattice contact layer and a transparent conductive oxide layer are stacked on the substrate in sequence. Next, an etching mask layer is formed on a portion of the transparent conductive oxide layer, in which the etching mask layer is an insulator. Then, a definition step is performed by using the etching mask layer to remove an exposed portion of the transparent conductive oxide layer, and the superlattice contact layer, the second conductivity type cladding layer and the active layer under the exposed portion of the transparent conductive oxide layer until the first conductivity type cladding layer is exposed. The etching mask layer is then removed. Subsequently, a first conductivity type electrode is formed on the exposed portion of the first conductivity type cladding layer, and a second conductivity type electrode is formed on the transparent conductive oxide layer.

Claims22

Dependent claims

A method for manufacturing a light-emitting diode (LED), comprising:

providing a substrate, wherein the substrate includes a first conductivity type cladding layer, an active layer, a second conductivity type cladding layer, a superlattice contact layer and a transparent conductive oxide layer stacked thereon in sequence;
forming an etching mask layer on a portion of the transparent conductive oxide layer, wherein the etching mask layer is an insulator;
performing a first etching step to remove the exposed portion of the transparent conductive oxide layer until the superlattice contact layer is exposed;
performing a second etching step to remove the exposed portion of the superlattice contact layer as well as the second conductivity type cladding layer and the active layer underlying the exposed portion of the superlattice contact layer until the first conductivity type cladding layer is exposed;
removing the etching mask layer;
and
forming a first conductivity type electrode and a second conductivity type electrode respectively on the exposed portion of the first conductivity type cladding layer and the transparent conductive oxide layer.

4 more elements

A method for manufacturing a light-emitting diode, comprising:

providing a substrate, wherein the substrate includes a first conductivity type cladding layer, an active layer, a second conductivity type cladding layer, a superlattice contact layer and a transparent conductive oxide layer stacked thereon in sequence;
forming a dielectric layer to cover the transparent conductive oxide layer;
forming a photoresist layer to cover a portion of the dielectric layer by using a first mask;
removing an exposed portion of the dielectric layer by using the photoresist layer until a portion of the transparent conductive oxide layer is exposed;
removing the remaining photoresist layer;
performing a definition step by using the dielectric layer to remove an exposed portion of the transparent conductive oxide layer, as well as the superlattice contact layer, the second conductivity type cladding layer and the active layer underlying the exposed portion of the transparent conductive oxide layer until the first conductivity type cladding layer is exposed;
removing the dielectric layer;
and
forming a first conductivity type electrode and a second conductivity type electrode respectively on the exposed portion of the first conductivity type cladding layer and the transparent conductive oxide layer by using a second mask.

6 more elements

Dependencies are inferred from the claim text.

Method for manufacturing a light-emitting diode

Life of this patent

Method for manufacturing a light-emitting diode

Life of this patent

Abstract

Claims22