Magnetoresistive spin valve sensor with tri-layer free layer

A method of forming a TMR sensor element having improved free layer coercivity, improved magnetoresistive ratio, low areal resistance and improved magnetostriction properties comprising:

• providing a seed layer;
• forming a pinning layer on said seed layer;
• forming a pinned layer on said pinning layer;
• forming a tunneling barrier layer on said pinned layer;
• forming a composite, multi-layered free layer on said barrier layer;
• forming a capping layer on said free layer;
• magnetically coupling said pinning layer to said pinned layer.

A CCP CPP GMR sensor having improved coercivity, improved areal resistance, improved GMR ratio and improved magnetostriction properties comprising:

• a seed layer;
• a pinning layer formed on said seed layer;
• a pinned layer formed on said pinning layer and magnetically coupled thereto;
• a first conducting, non-magnetic spacer layer formed on said pinned layer;
• a CCP layer formed on said first spacer layer;
• a second spacer layer formed on said CCP layer;
• a composite multi-layer free layer formed on said second spacer layer;
• a capping layer formed on said free layer.

A method of forming a CCP CPP GMR sensor having improved coercivity, improved areal resistance, improved GMR ratio and improved magnetostriction properties comprising:

• providing a seed layer;
• forming a pinning layer on said seed layer;
• forming a pinned layer on said pinning layer;
• forming a first conducting, non-magnetic spacer layer on said pinned layer;
• forming a CCP layer on said first spacer layer;
• forming a second conducting, non-magnetic spacer layer on said CCP layer;
• forming a multi-layer composite free layer on said second spacer layer;
• forming a capping layer on said free layer;
• magnetically coupling said pinning layer to said pinned layer.

A CPP GMR sensor having improved coercivity, improved areal resistance, improved GMR ratio and improved magnetostriction properties comprising:

• a seed layer;
• a pinning layer formed on said seed layer;
• a pinned layer formed on said pinning layer and magnetically coupled thereto;
• a conducting, non-magnetic spacer layer formed on said pinned layer;
• a tri-layer composite free layer formed on said spacer layer;
• a capping layer formed on said free layer.