Anti-blooming storage pixel
AssigneeMicron Technology, Inc.
InventorsPeter P. Altice, Jr., Jeffrey A. McKee
Life of this patent
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Abstract
Embodiments of the present invention provide pixel cells with increased storage capacity, which are capable of anti-blooming operations. In an exemplary embodiment a pixel cell has an electronic shutter that transfers charge generated by a photo-conversion device to a storage node before further transferring the charge to the pixel cell's floating diffusion node. Each pixel cell also includes an anti-blooming transistor for directing excess charge out of each respective pixel cell, thus preventing blooming. Additionally, two or more pixel cells of an array may share a floating diffusion node and reset and readout circuitry.
Claims47
A pixel cell comprising:
- a photo-conversion device;
- a storage node switchably coupled to the photo-conversion device for receiving charge from the photo-conversion device via a shutter transistor;
- a capacitor electrically connected to a gate of the shutter transistor and the storage node;
- a sensing node switchably coupled to the storage node for receiving the charge from the storage node;
- and
- an anti-blooming circuit electrically connected to the photo-conversion device for selectively draining charge from the photo-conversion device.
A pixel cell comprising:
- a photo-conversion device;
- a storage node switchably coupled to the photo-conversion device for receiving charge from the photo-conversion device via a shutter transistor, a gate of the shutter transistor being electrically connected to the storage node;
- a first barrier region adjacent to the storage node, the barrier region being electrically connected to the gate of the shutter transistor;
- a sensing node switchably coupled to the storage node for receiving the charge from the storage node;
- and
- an anti-blooming circuit electrically connected to the photo-conversion device for selectively draining charge from the photo-conversion device.
A pixel sensor array comprising:
- at least one subset of pixel cells at a surface of a substrate, the at least one subset comprising:
- at least two photo-conversion devices;
- at least two anti-blooming transistors, each anti-blooming transistor being electrically connected to a respective photo-conversion device for selectively draining charge from the respective photo-conversion device;
- at least two storage nodes switchably coupled to a respective photo-conversion device for receiving charge from the respective photo-conversion device via a respective shutter transistor, a gate of each shutter transistor being electrically connected to a respective storage node;
- and
- a sensing node switchably coupled to the storage nodes for receiving the charge from the storage nodes via respective transfer transistors, a gate of each transfer transistor being electrically connected to a respective gate of an anti-blooming transistor.
A processor-based system comprising:
- a processor;
- and
- an imager coupled to the processor, the imager comprising an array of pixel cells, at least one of the pixel cells comprising:
- a photo-conversion device;
- a storage node switchably coupled to the photo-conversion device for receiving charge from the photo-conversion device via a shutter transistor;
- a capacitor electrically connected to a gate of the shutter transistor and the storage node;
- a sensing node switchably coupled to the storage node for receiving the charge from the storage node;
- and
- an anti-blooming circuit electrically connected to the photo-conversion device for selectively draining charge from the photo-conversion device.
A processor-based system comprising:
- a processor;
- and
- an imager coupled to the processor, the imager comprising an array of pixel cells, at least one of the pixel cells comprising:
- a photo-conversion device;
- a storage node switchably coupled to the photo-conversion device for receiving charge from the photo-conversion device via a shutter transistor, a gate of the shutter transistor being electrically connected to the storage node;
- a first barrier region adjacent to the storage node, the barrier region being electrically connected to the gate of the shutter transistor;
- a sensing node switchably coupled to the storage node for receiving the charge from the storage node;
- a second barrier region between the storage node and the sensing node;
- and
- an anti-blooming circuit electrically connected to the photo-conversion device for selectively draining charge from the photo-conversion device.
An integrated circuit comprising:
- an array of pixel cells, each pixel cell comprising:
- a photo-conversion device;
- a storage node switchably coupled to the photo-conversion device for receiving charge from the photo-conversion device via a shutter transistor;
- a capacitor electrically connected to a gate of the shutter transistor and the storage node;
- a sensing node switchably coupled to the storage node for receiving the charge from the storage node;
- and
- an anti-blooming circuit electrically connected to the photo-conversion device for selectively draining charge from the photo-conversion device.
An integrated circuit comprising:
- an array of pixel cells, each pixel cell comprising:
- a photo-conversion device;
- a storage node switchably coupled to the photo-conversion device for receiving charge from the photo-conversion device via a shutter transistor, a gate of the shutter transistor being electrically connected to the storage node;
- a first barrier region adjacent to the storage node, the barrier region being electrically connected to the gate of the shutter transistor;
- a sensing node switchably coupled to the storage node for receiving the charge from the storage node;
- and
- an anti-blooming circuit electrically connected to the photo-conversion device for selectively draining charge from the photo-conversion device.
Dependencies are inferred from the claim text.