Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, comprising steps of:

• forming a first layer comprising a first material over a first substrate;
• forming a second layer comprising a second material on the first layer;
• forming an element layer that includes a semiconductor element over the second layer;
• bonding a second substrate to the second layer with a first bonding member interposed therebetween so as to sandwich the element layer between the first substrate and the second substrate;
• separating the first substrate and the first layer from the second layer;
• bonding a third substrate to the element layer with a second bonding member interposed therebetween so as to sandwich the element layer between the second substrate and the third substrate;
• separating at least the second substrate front element layer;
• and
• separating at least the entire third substrate from the element layer.

A method of manufacturing a semiconductor device, comprising:

• forming a first layer comprising a first material over a first substrate;
• forming a second layer comprising a second material on the first layer;
• forming a peeled layer that includes a semiconductor element over the second layer;
• bonding a second substrate to the peeled layer using a first bonding member to sandwich the peeled layer between the first substrate and the second substrate;
• separating the first substrate and the first layer from the second layer:
• bonding a third substrate to the second layer using a second bonding member to sandwich the peeled layer between the second substrate and the third substrate;
• separating the second substrate from the peeled layer to form the peeled layer that uses the second bonding member as a supporter;
• and
• separating at least the entire third substrate from the peeled layer.

A method of manufacturing a semiconductor device, comprising steps of:

• forming a first layer comprising a first material over a first substrate;
• forming a second layer comprising a second material on the first layer;
• forming an element layer that includes a semiconductor element over the second layer;
• bonding a second substrate to the element layer using a first bonding member to sandwich the element layer between the first substrate and the second substrate;
• separating the first substrate and the first layer from the second layer;
• bonding a third substrate to the second layer using a second bonding member to sandwich the element layer between the second substrate and the third substrate;
• separating the element layer from the second substrate by removing the first bonding member;
• and
• separating at least the entire third substrate from the element layer.

A method of manufacturing a semiconductor device, comprising steps of:

• forming a first layer comprising a first material over a first substrate;
• forming a second layer comprising a second material on the first layer;
• forming an element layer that includes a semiconductor element over the second layer;
• bonding a second substrate to the element layer with a first bonding member interposed therebetween so as to sandwich the element layer between the first substrate and the second substrate;
• separating the first substrate and the first layer from the second layer;
• bonding a third substrate to the second layer with a second bonding member interposed therebetween to sandwich the element layer between the second substrate and the third substrate;
• separating at least the second substrate and the first bonding member from the element layer;
• and
• separating at least the entire third substrate from the element layer.