Precursor solutions and methods of using same

A method, comprising:

• disposing a precursor solution onto a surface of a layer to form a precursor film, the precursor film including a carboxylate salt of a rare earth metal, a fluorinated carboxylate salt of an alkaline earth metal and a non-halogenated carboxylate salt of copper;
• and
• treating the precursor film to form an intermediate of a rare earth metal-alkaline earth metal-transition metal oxide,
• wherein defects contained within the intermediate comprise less than about 20 percent of any volume element of the intermediate defined by a projection of one square centimeter of a surface of the intermediate.

A method, comprising:

• disposing a precursor solution onto a surface of a layer to form a precursor film, the precursor film including a carboxylate salt of a rare earth metal, a fluorinated carboxylate salt of an alkaline earth metal, a non-halogenated carboxylate salt of a transition metal, and a Lewis base;
• and
• treating the precursor film to form an intermediate of a rare earth metal-alkaline earth metal-transition metal oxide,
• wherein defects contained within the intermediate comprise less than about 20 percent of any volume element of the intermediate defined by a projection of one square centimeter of a surface of the intermediate.

A method, comprising:

• disposing a precursor solution onto a surface of a layer to form a precursor film, the precursor film including a carboxylate salt of a rare earth metal, a fluorinated carboxylate salt of an alkaline earth metal, a non-halogenated carboxylate salt of a transition metal;
• and
• treating the precursor film to form a superconductor material having a critical current of at least about 200 Amperes per centimeter of width,
• wherein defects contained within the superconductor material comprise less than about 20 percent of any volume element of the superconductor material defined by a projection of one square centimeter of a surface of the superconductor material.