Semiconductor light-emitting device using phosphors for performing wavelength conversion
AssigneeSanken Electric Co., Ltd.
InventorsKoji Ohtsuka, Hitoshi Murofushi
Life of this patent
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Abstract
A semiconductor light-emitting device includes substrate (3), a plurality of light-emitting-element-layers (10a, 10b, 10c, . . . ) of semiconductor material formed on the substrate (3) so as to be isolated from each other and having a wider band gap than the substrate (3), and phosphors (15a, 15b, 15c, . . . ) converting wavelengths of light from the light-emitting-element-layers (10a, 10b, 10c, . . . ) into other wavelengths.
Claims16
A semiconductor light-emitting device comprising:
- a silicon single crystal substrate;
- a plurality of light-emitting-element-layers of a nitride-based compound semiconductor formed on the silicon single crystal substrate to be isolated from each other by an isolation area and having a wider band gap than the silicon single crystal substrate respectively;
- a phosphor converting a wavelength of light from the light-emitting-element-layer into another wavelength;
- first electrodes provided on top surfaces of the light-emitting-element-layers respectively within the phosphor and electrically connected to the light-emitting-element-layers respectively;
- and
- a second electrode provided on a lower surface of the silicon single crystal substrate and electrically connected to the light-emitting-element-layers.
A light-emitting display implemented by a plurality of pixels on a silicon single crystal substrate, each of the pixels comprising:
- a plurality of light-emitting-element-layers of a nitride-based compound semiconductor formed on the silicon single crystal substrate so as to be isolated from each other by an isolation area and having a wider band gap than the silicon single crystal substrate respectively;
- a phosphor converting a wavelength of light from the light-emitting-element-layer into another wavelength;
- first electrodes provided on top surfaces of the light-emitting-element-layers respectively within the phosphor and electrically connected to the light-emitting-element-layers respectively;
- and
- a second electrode provided on a lower surface of the silicon single crystal substrate and electrically connected to the light-emitting-element-layers.
A semiconductor light-emitting device comprising:
- a substrate;
- a plurality of light-emiffing-element-layers of semiconductor material formed on the substrate to be isolated from each other and having a wider band gap than the substrate respectively;
- a phosphor converting a wavelength of light from the light-emitting-element-layer into other wavelength;
- first electrodes provided on top surfaces of the light-emitting-element-layers respectively within the phosphor and electrically connected to the light-emitting-element-layers respectively;
- and
- a second electrode provided on a lower surface of the silicon single crystal substrate and electrically connected to the light-emitting-element-layers.
Dependencies are inferred from the claim text.