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US 7,323,708 B2Granted
Phase change memory devices having phase change area in porous dielectric layer
AssigneeSamsung Electronics Co., Ltd.
InventorsSe-Ho Lee, Young-Nam Hwang
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Abstract
A phase change memory device includes a lower electrode and a porous dielectric layer having fine pores on the lower electrode. A phase change layer is provided in the fine pores of the porous dielectric layer. An upper electrode is provided on the phase change layer. Related manufacturing methods are also described.
Claims13
A phase change memory device comprising:
- a lower electrode;
- a porous dielectric layer on the lower electrode and having a plurality of fine pores therein;
- a phase change layer in the fine pores that is configured to change between an amorphous state and a crystal state;
- and
- an upper electrode on the phase change layer, remote from the lower electrode.
2 more elements
A phase change memory device comprising:
- a lower electrode;
- an absenced pattern phase change layer comprising at least two rows and at least two columns of islands of phase change material in fine pores in a porous dielectric layer on the lower electrode;
- and
- an upper electrode on the absenced pattern phase change layer, remote from the lower electrode.
1 more element
Dependencies are inferred from the claim text.