Silicon containing TARC/barrier layer
AssigneeInternational Business Machines Corporation
InventorsWu-Song S. Huang, Sean D. Burns, Pushkara Rao Varanasi
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Abstract
A top anti-reflective coating material (TARC) and barrier layer, and the use thereof in lithography processes, is disclosed. The TARC/barrier layer may be especially useful for immersion lithography using water as the imaging medium. The TARC/barrier layer comprises a polymer which comprises at least one silicon-containing moiety and at least one aqueous base soluble moiety. Suitable polymers include polymers having a silsesquioxane (ladder or network) structure, such as polymers containing monomers having the structure: where R1 comprises an aqueous base soluble moiety, and x is from about 1 to about 1.95, more preferably from about 1 to about 1.75.
Claims13
A method of forming a patterned material layer on a substrate, the method comprising:
- providing a substrate having a material layer on a surface thereof;
- depositing a photoresist composition on the substrate to form a photoresist layer on the material layer;
- applying a top antireflective/barrier layer material on the photoresist layer, thereby forming a coated substrate, the top antireflective coating and barrier layer material comprising at least one silicon-containing moiety and at least one aqueous base soluble moiety;
- patternwise exposing the coated substrate to imaging radiation;
- removing simultaneously the top antireflective/barrier layer material and portions of the photoresist layer from the coated substrate, thereby forming a patterned photoresist layer on the material layer;
- and
- transferring the photoresist layer pattern to the material layer.
Dependencies are inferred from the claim text.