Cleaning composition and method of cleaning a semiconductor device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsChang-Sup Mun, Chang-Ki Hong, Sang-Jun Choi, Woo-Sung Han
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Abstract
A cleaning composition comprises an alkali solution, pure water, and a surfactant represented by the following chemical formula: R1-OSO3—HA+ wherein R1 is one selected from a group consisting of a butyl group, an isobutyl group, an isooctyl group, a nonyl phenyl group, an octyl phenyl group, a decyl group, a tridecyl group, a lauryl group, a myristyl group, a cetyl group, a stearyl group, an oleyl group, a licenoleyl group and a behnyl group, and A is one selected from a group consisting of ammonia, ethanol amine, diethanol amine and triethanol amine.
Claims12
A cleaning composition comprising:
- an alkali solution;
- a metal corrosion inhibitor comprising at least one selected from the group consisting of 2-butyne-1,4-diol and 3-butyne-1-ol;
- pure water;
- and
- a surfactant represented by the following chemical formula:
- R1-OSO3-HA+
- wherein R1 is one selected from the group consisting of a butyl group, an isobutyl group, an isooctyl group, a nonyl phenyl group, an octyl phenyl group, a decyl group, a tridecyl group, a lauryl group, a myristyl group, a cetyl group, a stearyl group, an oleyl group, a licenoleyl group and a behnyl group, and A is one selected from the group consisting of ammonia, ethanol amine, diethanol amine and triethanol amine.
A method of cleaning a semiconductor device comprising:
- forming a structure including a polysilicon layer on a substrate;
- and
- cleaning the substrate having the structure using a cleaning composition comprising an alkali solution, a metal corrosion inhibitor comprising at least one selected from the group consisting of 2-butyne-1,4-diol and 3-butyne-1-ol, pure water and a surfactant represented by the following chemical formula:
- R1-OSO3—HA+
- wherein R1 is one selected from the group consisting of a butyl group, an isobutyl group, an isooctyl group, a nonyl phenyl group, an octyl phenyl group, a decyl group, a tridecyl group, a lauryl group, a myristyl group, a cetyl group, a stearyl group, an oleyl group, a licenoleyl group and a behnyl group, and A is one selected from the group consisting of ammonia, ethanol amine, diethanol amine and triethanol amine, and
- wherein the cleaning composition suppresses an etching of the polysilicon layer while cleaning the substrate.
Dependencies are inferred from the claim text.