Surface acoustic wave device, surface acoustic wave apparatus, and communications equipment
AssigneeKYOCERA Corporation
InventorsYuuko Yokota, Motoki Ito, Shigehiko Nagamine, Masayuki Funami, Kiyohiro Iioka
Life of this patent
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Abstract
An IDT electrode 3, and an input electrode section 5 and an output electrode section 6 each connecting with the IDT electrode 3 are formed in a filter region on one main surface of a piezoelectric substrate 2, and a semiconductor layer 22 is formed on the other main surface opposite to the one main surface of the piezoelectric substrate 2. The semiconductor layer 22 makes it possible to prevent pyroelectric destruction in the device manufacturing process as well as to prevent out-of-band attenuation characteristics from being degraded.
Claims20
A surface acoustic wave device comprising:
- a piezoelectric substrate,
- an IDT electrode, an input electrode section connected with the IDT electrode and an output electrode section connected with the IDT electrode each formed in a filter region on one main surface of the piezoelectric substrate, wherein
- the piezoelectric substrate has a semiconductor layer formed by depositing semiconductor on the other main surface opposite to the one main surface thereof, wherein the semiconductor layer is formed except for a region opposed to the input electrode section and/or to the output electrode section on the other main surface.
A manufacturing method of surface acoustic wave device comprising:
- providing a piezoelectric substrate,
- forming an IDT electrode, an input electrode section connected with the IDT electrode and an output electrode section connected with the IDT electrode each in a filter region on one main surface of the piezoelectric substrate,
- depositing a semiconductor layer except for a region opposed to the input electrode section and/or to the output electrode section on the other main surface opposite to the one main surface of the piezoelectric substrate.
A manufacturing method of surface acoustic wave device comprising:
- providing a piezoelectric substrate,
- depositing a semiconductor layer on the other main surface opposite to one main surface of the piezoelectric substrate, and
- then forming an IDT electrode, an input electrode section connected with the IDT electrode and an output electrode section connected with the IDT electrode each in a filter region on the one main surface of the piezoelectric substrate, wherein the semiconductor layer is formed except for a region opposed to the input electrode section and/or to the output electrode section on the other main surface.
A surface acoustic wave device comprising:
- a piezoelectric substrate,
- an IDT electrode, an input electrode section connected with the IDT electrode and an output electrode section connected with the IDT electrode each formed in a filter region on one main surface of the piezoelectric substrate, wherein
- the piezoelectric substrate has a semiconductor layer partially formed by depositing semiconductor on the other main surface thereof and,
- wherein an isolated region of the semiconductor layer is formed opposed to the input electrode section and/or to the output electrode section on the other main surface, the isolated region being electrically insulated from other sections of the semiconductor layer.
Dependencies are inferred from the claim text.