US 7,306,963 B2 · Precision synthesis of quantum dot nanostructures for fluorescent and optoelectronic devices

Abstract

Methods are disclosed generally directed to design and synthesis of quantum dot nanoparticles having improved uniformity and size. In a preferred embodiment, a release layer is deposited on a semiconductor wafer. A heterostructure is grown on the release layer using epitaxial deposition techniques. The heterostructure has at least one layer of quantum dot material, and optionally, one or more layers of reflective Bragg reflectors. A mask is deposited over a top layer and reactive ion-beam etching applied to define a plurality of heterostructures. The release layer can be dissolved releasing the heterostructures from the wafer. Some exemplary applications of these methods include formation of fluorophore materials and high efficiency photon emitters, such as quantum dot VCSEL devices. Other applications include fabrication of other optoelectronic devices, such as photodetectors.

Claims27

Dependent claims

A method of generating one or more quantum dot structures, comprising

depositing a release layer on a semiconductor substrate,
forming a semiconductor heterostructure over the release layer, the heterostructure providing confinement of charge carriers therein, said heterostructure comprising at least one distributed Bragg reflector,
masking a surface of the heterostructure,
selectively removing the exposed portions of the heterostructure to generate a plurality of separate heterostructure elements each disposed on a remaining portion of the release layer, and
removing the release layer to release the heterostructure elements as a plurality of quantum dots.

2 more elements

Dependencies are inferred from the claim text.

Precision synthesis of quantum dot nanostructures for fluorescent and optoelectronic devices

Life of this patent

Precision synthesis of quantum dot nanostructures for fluorescent and optoelectronic devices

Life of this patent

Abstract

Claims27