High radiance LED chip and a method for producing same
AssigneeOSRAM GmbH
InventorsGeorg Bogner, Siegmar Kugler, Ernst Nirschl, Raimund Oberschmid, Karl-Heinz Schlereth, Olaf Schoenfeld, Norbert Stath, Gerald Neumann
Life of this patent
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Abstract
The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the window layer available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.
Claims4
A method of fabricating a lens structure on the surface of a light-emitting component,
- wherein the light-emitting component comprises a radiation-emitting active region of lateral cross-sectional area FL and a radioparent window layer disposed after said radiation-emitting active region in the direction of radiation and having a refractive index nS, and which, for purposes of the decoupling of light, has a lateral cross-sectional area FC and comprises a decoupling surface adjacent a medium having the refractive index nM, the cross-sectional area FL of the radiation-emitting active region being smaller than the cross-sectional area FC of the decoupling surface, in accordance with the relation:
- F
- L
- ≤
- (
- n
- m
- /
- n
- S
- )
- 2
- ·
- F
- c
- characterized in that on an outer surface of said light-emitting component through which light is intended to exit or pass, said lens structure is shaped by means of a milling or sawing tool or an etching process.
Dependencies are inferred from the claim text.