High frequency power amplifier circuit and electronic component for high frequency power amplifier
AssigneeRenesas Technology Corp.
InventorsHirokazu Tsurumaki, Hiroyuki Nagai, Tomio Furuya, Makoto Ishikawa
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Abstract
In a high frequency power amplifier circuit that supplies a bias to an amplifying FET by a current mirror method, scattering of a threshold voltage Vth due to the scattering of the channel impurity concentration of the FET, and a shift of a bias point caused by the scattering of the threshold voltage Vth and a channel length modulation coefficient λ due to a short channel effect are corrected automatically. The scattering of a high frequency power amplifying characteristic can be reduced as a result.
Claims10
A high frequency power amplifier circuit, comprising:
- an amplifying transistor for amplifying a high frequency signal;
- and
- a current-voltage converting element for converting a current into a voltage by applying a predetermined current,
- wherein a voltage corresponding to the voltage generated by said current-voltage converting element is applied to a control pin of said amplifying transistor thereby to make flow the current that is proportional to the current flowing to said current-voltage converting element,
- said high frequency power amplifier circuit including:
- a bias generation circuit which includes a current simulating transistor having the same channel length or base width and formed in the same process as said amplifying transistor, and a diode-connected transistor connected in series to said current simulating transistor, said a bias generation circuit comparing the voltage formed based on the current flowing to said diode-connected transistor with a reference voltage generated by the current-voltage converting element that converts the current from a constant current circuit into the voltage, and supplying such a bias that inhibits an idle current of said amplifying transistor from varying due to a short channel effect or an Early effect to said amplifying transistor and current simulating transistor.
A high frequency power amplifier circuit, comprising:
- an amplifying transistor for amplifying a high frequency signal;
- and
- a current-voltage converting element for converting a current into a voltage by applying a predetermined current,
- wherein a voltage corresponding to the voltage generated by said current-voltage converting element is applied to a control pin of said amplifying transistor thereby to make flow a current that is proportional to the current flowing to said current-voltage converting element,
- said high frequency power amplifier circuit comprising:
- a bias generation circuit including a current simulating transistor having the same channel length or base width and formed in the same process as said amplifying transistor, a diode-connected transistor connected in series to said current simulating transistor, and a differential amplifier circuit for comparing the voltage formed based on the current flowing to said diode-connected transistor with a reference voltage generated by said current-voltage converting element to output the voltage that complies with a potential difference,
- wherein said differential amplifier circuit operates so that the voltage formed based on the current flowing to said diode-connected transistor can match said reference voltage, and the output voltage of said differential amplifier circuit applies to the control pin of said amplifying transistor, then an idle current flows to said amplifying transistor.
Dependencies are inferred from the claim text.