High temperature electronic devices
AssigneeHalliburton Energy Services, Inc.
InventorsPaul F. Rodney, James E. Masino, Christopher A. Golla, Roger L. Schultz, James J. Freeman
Life of this patent
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Abstract
In at least some embodiments, electronic devices suitable for use at temperatures in excess of 200 C. may comprise an integrated circuit fabricated on a silicon carbide substrate, and a thick passivation layer. In other embodiments, electronic devices suitable for use at temperatures in excess of 200 C. may comprise an integrated circuit formed from silicon located on a sapphire substrate, and a thick passivation layer. The electronic devices may be implemented in the context of hydrocarbon drilling and production operations.
Claims54
An electronic device comprising:
- an integrated circuit fabricated on a silicon carbide substrate, wherein the integrated circuit comprises at least one circuit selected in the group consisting of:
- an oscillator, a logic gate, an analog-to-digital converter, a digital-to-analog converter, a sample and hold circuit, a charge-coupled delay line, and an operational amplifier;
- and
- a passivation layer thicker than about 2 microns, wherein the electronic device is operable for extended periods in an environment with temperatures greater than 200 Celsius.
An electronic device comprising:
- an integrated circuit fabricated on a sapphire substrate, wherein the integrated circuit comprises at least one circuit in the group consisting of:
- an oscillator, a logic gate, an analog-to-digital converter, a digital-to-analog converter, a sample and hold circuit, a charge-coupled delay line, and an operational amplifier;
- and
- a passivation layer thicker than about 2 microns, wherein the electronic device operates for an extended period in an environment with a temperature of at least 200 Celsius.
A method of manufacturing a high-temperature circuit, the method comprising:
- determining a design for a circuit comprising a substrate of at least one of silicon on sapphire (SOS) or silicon carbide (SiC);
- calculating a fabrication cost for each of a plurality of differently partitioned chipsets that implement the circuit design;
- identifying one of the differently partitioned chipsets having the minimum fabrication cost;
- and
- fabricating the minimum cost chipset.
An electronic device that comprises:
- a sapphire substrate;
- and
- an antenna fabricated on the sapphire substrate and configurable to wirelessly transmit information,
- wherein the device operates as a tag device for an extended period in an environment having a temperature greater than about 200 Celsius.
An electronic device that comprises:
- a SiC substrate;
- and
- an antenna fabricated on the SiC substrate and configurable to wirelessly transmit information,
- wherein the device operates as a tag device for an extended period in an environment having a temperature greater than about 200 Celsius.
An electronic device that comprises:
- a sapphire substrate;
- and
- a ring oscillator fabricated on the sapphire substrate, the oscillator produces an oscillating signal having a frequency indicative of an environmental parameter,
- wherein the device operates in an environment having a temperature greater than about 200 Celsius.
An electronic device that comprises:
- a SiC substrate;
- a ring oscillator fabricated on the SiC substrate;
- and
- a passivation layer thicker than about 2 microns,
- wherein the device operates in an environment having a temperature greater than about 200 Celsius.
Dependencies are inferred from the claim text.