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US 7,294,875 B2Granted
Nanoscale programmable structures and methods of forming and using same
AssigneeAxon Technologies Corporation
InventorMichael N. Kozicki
Life of this patent
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Abstract
A programmable structure and device and methods of forming and using the structure and device are disclosed. The structure includes a soluble electrode, an ion conductor, and an inert electrode. Upon application of a sufficient voltage, a conductive region forms within or on the ion conductor and between the electrodes. The presence or absence of the conductive region can be used to store information in memory devices.
Claims13
A microelectronic programmable structure comprising:
- an insulating material having a via width of less than about 200 nm;
- an ion conductor comprising conductive material formed within a portion of the via;
- an oxidizable electrode proximate the ion conductor;
- a barrier layer between the oxidizable electrode and the indifferent electrode;
- and
- an indifferent electrode proximate the ion conductor.
3 more elements
A microelectronic programmable structure comprising:
- an insulating material comprising electron-beam resist material and having a via;
- an ion conductor comprising conductive material formed within a portion of the via;
- an oxidizable electrode proximate the ion conductor;
- and
- an indifferent electrode proximate the ion conductor.
2 more elements
A microelectronic programmable structure comprising:
- an insulating material having a via width of less than about 200 nm;
- an ion conductor comprising conductive material formed within a portion of the via;
- an oxidizable electrode proximate the ion conductor;
- and
- an indifferent electrode proximate the ion conductor,
- wherein the insulating material comprises electron-beam resist material.
3 more elements
Dependencies are inferred from the claim text.