Semiconductor substrate, semiconductor device, method of manufacturing semiconductor substrate, and method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, comprising:

• forming an insulating layer on a single crystal semiconductor substrate;
• forming an opening section for exposing a part of a surface of the single crystal semiconductor substrate through the insulating layer;
• forming on the insulating layer a non-crystalline semiconductor layer disposed so as to have contact with the single crystal semiconductor substrate via the opening section;
• removing the insulating layer while a part of the non-crystalline semiconductor layer embedded in the opening section supporting a part of the non-crystalline semiconductor layer disposed on the insulating layer above the single crystal semiconductor substrate;
• forming a single-crystallized semiconductor layer obtained by single-crystallizing the non-crystalline semiconductor layer using the single crystal semiconductor substrate as a seed by providing a thermal treatment on the non-crystalline semiconductor layer from which the insulating layer is removed;
• filling a gap between the single-crystallized semiconductor layer and the single crystal semiconductor substrate with an embedded insulating layer;
• forming a gate electrode on the single-crystallized semiconductor layer;
• and
• forming in the single-crystallized semiconductor layer a source layer disposed on one side of the gate electrode and a drain layer disposed on the other side of the gate electrode.

A method of manufacturing a semiconductor device, comprising:

• forming an insulating layer on a single crystal semiconductor substrate;
• forming a non-crystalline semiconductor layer on the insulating layer;
• patterning the non-crystalline semiconductor layer so that the non-crystalline semiconductor layer has a fin-like shape;
• forming an insulating film on the non-crystalline semiconductor layer patterned to have the fin-like shape;
• forming an opening section for exposing a part of a surface of the single crystal semiconductor substrate through the insulating film, the non-crystalline semiconductor layer and the insulating layer;
• forming a single crystal semiconductor layer embedded in the opening section so as to have contact with the non-crystalline semiconductor layer;
• removing the insulating film and the insulating layer while the single crystal semiconductor layer supporting the non-crystalline semiconductor layer above the single crystal semiconductor substrate;
• forming a single-crystallized semiconductor layer obtained by single-crystallizing the non-crystalline semiconductor layer using the single crystal semiconductor layer as a seed by providing a thermal treatment on the non-crystalline semiconductor layer from which the insulating film and the insulating layer are removed;
• filling a gap between the single-crystallized semiconductor layer and the single crystal semiconductor substrate with an embedded insulating layer;
• forming a gate electrode on a side wall of the single-crystallized semiconductor layer;
• and
• forming in the single-crystallized semiconductor layer a source layer disposed on one side of the gate electrode and a drain layer disposed on the other side of the gate electrode.