Method for fabricating a film bulk acoustic resonator
AssigneeSamsung Electronics Co., Ltd.
InventorsSang-chae Kim, In-sang Song, Young-tack Hong
Life of this patent
Estimating the term…
Abstract
A method for fabricating a film bulk acoustic resonator (FBAR) includes depositing a dielectric layer on a substrate, providing a sacrificial layer on part of the dielectric layer; providing a bottom electrode on part of the sacrificial layer on part of the dielectric layer; providing a piezoelectric layer on the bottom electrode; patterning a top electrode on the piezoelectric layer; and removing the sacrificial layer. The substrate may have a cavity receiving the sacrificial layer. As a result, a cantilevered resonator having an air gap between the bottom electrode and the dielectric layer may be simply fabricated.
Claims23
A method for fabricating a film bulk acoustic resonator, the method comprising:
- providing a dielectric layer on a substrate;
- providing a sacrificial layer on a portion of the dielectric layer, while leaving a portion of the dielectric layer exposed to form an exposed dielectric layer;
- providing a bottom electrode on the sacrificial layer and on the exposed dielectric layer, the providing of the bottom electrode including depositing a conductive material on the sacrificial layer and on the exposed dielectric layer, the conductive material on the exposed dielectric layer forming a base section and the conductive material on the sacrificial layer forming an overhanging section;
- providing a piezoelectric layer on the bottom electrode;
- providing a top electrode on the piezoelectric layer;
- and
- removing the sacrificial layer.
A method for fabricating a film bulk acoustic resonator, the method comprising:
- forming a cavity on a substrate;
- providing a dielectric layer on the substrate;
- providing a sacrificial layer on a portion of the dielectric layer, while leaving a portion of the dielectric layer exposed to form an exposed dielectric layer;
- providing a bottom electrode on the sacrificial layer and on the exposed dielectric layer.
- providing a piezoelectric layer on the bottom electrode;
- providing a top electrode on the piezoelectric layer;
- and
- removing the sacrificial layer,
- wherein the providing of the bottom electrode includes depositing a conductive material on the exposed dielectric layer to form a base section and on the sacrificial layer to form an overhanging section, and partially removing the conductive material forming the base section, so that a width of the conductive material forming the base section is smaller than a width of the conductive material forming the overhanging section;
- and
- the providing of the top electrode includes depositing another conductive material on the piezoelectric layer and on the exposed dielectric layer, and patterning the another conductive material so that the top electrode includes a pad positioned on the exposed dielectric layer where the conductive material forming the base section has been removed, the pad being spaced from the conductive material forming the base section.
A method for fabricating a film bulk acoustic resonator, the method comprising:
- providing a dielectric layer on a substrate;
- providing a sacrificial layer on a portion of the dielectric layer, while leaving another portion of the dielectric layer exposed to form an exposed dielectric layer;
- providing a bottom electrode on a portion of the sacrificial layer and on the exposed dielectric layer;
- providing a piezoelectric layer on the bottom electrode;
- providing a top electrode on the piezoelectric layer;
- and
- removing the sacrificial layer.
Dependencies are inferred from the claim text.